Discontinuous Semiconductor Layer Structure for Higher Breakdown Voltage
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Solution Overview
Problem
Current semiconductor devices are limited by their breakdown voltage, hindering the increase of voltage ratings necessary for high voltage applications such as electric vehicles and Battery Management Systems.
Innovation Solution
A semiconductor device design featuring a discontinuous layer with gap portions on a substrate, where the gap portions are part of the substrate, allowing for a first conductivity type in the first and second regions and a second conductivity type in the substrate and third regions, which increases the breakdown voltage by adjusting resistance and parasitic PNP structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a continuous layer is used in the first region, then the device structure is simpler and easier to manufacture, but the breakdown voltage is limited and cannot achieve high voltage ratings
Solution Approach 1:
The first region is divided into multiple segments by introducing gap portions that expose the substrate. This segmentation of the continuous layer into discontinuous sections allows the device to achieve higher breakdown voltage by creating multiple depletion regions, while the segmented structure itself becomes the solution rather than adding further complexity.
2Reliability
If the gap portion length is increased to further increase breakdown voltage, then the voltage rating increases, but the noise coupling performance deteriorates
Solution Approach 1:
The patent optimizes the gap portion length as a critical parameter to achieve the desired breakdown voltage while maintaining acceptable noise coupling performance. By carefully selecting and adjusting this parameter, the design finds the optimal balance between voltage rating and noise immunity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves higher breakdown voltages, with simulated results showing a maximum of about 227V, while maintaining minimal impact on noise coupling performance, and can be adjusted by varying gap portion length and doping concentration.
Implementation Method 1
The voltage applied to a semiconductor device is constrained by the breakdown voltage of the device, which is the minimum voltage that causes avalanche breakdown in the device
Data Source
AI summary
A device includes a first region disposed on a substrate, a second region disposed on the first region, a third region disposed in the second region and a first terminal region disposed in the third region. The first region comprises a discontinuous layer including at least one gap portion. The at least one gap portion comprises a portion of the substrate. The first region and the second region have a first conductivity type, and the substrate, the third region and the first terminal region have a second conductivity type. The first conductivity type is different from the second conductivity type.