Semiconductor Layer Growth on Patterned Substrate for LED Efficiency
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Solution Overview
Problem
Current methods for forming semiconductor layers in light emitting diodes (LEDs) result in high dislocation defects due to growth direction mismatches, affecting the internal quantum efficiency of the active layer in light emitting devices.
Innovation Solution
A method involving the formation of a projection pattern on a growth substrate, followed by selective growth and removal of semiconductor layers, which directs dislocation defects to a scribing region, minimizing their impact on the chip region and enhancing the quality of the semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If semiconductor layers are grown on a flat growth substrate, then the manufacturing process is simple, but dislocation defects occur due to growth direction mismatches, reducing internal quantum efficiency
Solution Approach 1:
The invention introduces projection patterns (ridges or grooves) at specific locations (scribing regions) on the growth substrate, creating local structural variations. These localized features guide dislocation defects to specific areas away from the chip region, thereby improving internal quantum efficiency in the active layer without complicating the overall manufacturing process
Solution Approach 2:
The invention extracts or separates dislocation defects from the chip region by providing projection patterns that act as dislocation sinks. The projection patterns are selectively formed in scribing regions, allowing dislocations to be concentrated and removed from the functional areas, thus improving device performance
2Reliability
If projection patterns are formed on the growth substrate to reduce dislocation defects, then internal quantum efficiency is improved, but the manufacturing process becomes more complex
Solution Approach 1:
Projection patterns are formed only in specific scribing regions rather than uniformly across the entire growth substrate. This localized approach reduces dislocation defects in the chip region while minimizing the additional manufacturing complexity by limiting the projection pattern formation to specific areas
Solution Approach 2:
The projection patterns are formed on the growth substrate before epitaxial growth of the semiconductor layers. This preliminary structuring of the substrate allows the dislocation management function to be built-in from the start, simplifying subsequent processing steps compared to attempting to add dislocation control mechanisms later in the manufacturing process
Data Source
AI summary
A method for manufacturing a light emitting device according to an embodiment of the present invention includes preparing a growth substrate; selectively forming a projection pattern on the growth substrate; forming a first conductive type semiconductor layer on the growth substrate and the projection pattern; forming an active layer on the first conductive type semiconductor layer; forming a second conductive type semiconductor layer on the active layer; and executing an isolation etching for selectively removing the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer including the projection pattern.