Semiconductor Layer Structure for Uniform Current and Light Extraction
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Solution Overview
Problem
Existing semiconductor optoelectronic devices face challenges in achieving uniform current distribution and improved light extraction efficiency, which affect their performance and reliability.
Innovation Solution
The semiconductor device incorporates a semiconductor epitaxial structure with a specific arrangement of insulating layers, metal layers, and electrode pads, along with an intermediate structure between the metal layer and the insulating layer, to enhance current distribution and light extraction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional structure without intermediate structure is used, then the device complexity is reduced, but the current distribution uniformity and light extraction efficiency deteriorate
Solution Approach 1:
An intermediate structure comprising a first intermediate layer and a second intermediate layer is introduced between the metal layer and the insulating layer. This intermediate structure serves as a mediator to improve current distribution uniformity and light extraction efficiency, resolving the contradiction by adding functional complexity only where needed to enhance performance.
Solution Approach 2:
The intermediate structure uses composite material configuration with a first intermediate layer (having first refractive index) and a second intermediate layer (having second refractive index different from the first). This composite structure optimizes both current distribution and light extraction while managing the complexity through systematic material selection.
2Loss of energy
If no intermediate structure is present, then the manufacturing process is simpler, but the light extraction efficiency is reduced
Solution Approach 1:
The intermediate structure with specific refractive indices acts as an optical intermediary between the metal layer and the insulating layer, enhancing light extraction efficiency by reducing total internal reflection and improving light coupling, while the layered design allows for systematic manufacturing processes.
Solution Approach 2:
By controlling the refractive index parameters of the first and second intermediate layers (where the second refractive index differs from the first), the patent optimizes light extraction efficiency. This parameter-based approach allows for standardized manufacturing processes while achieving superior optical performance.
3Manufacturing precision
If the metal layer directly contacts the insulating layer, then the device structure is simpler, but the current distribution becomes non-uniform
Solution Approach 1:
The first intermediate layer and second intermediate layer are positioned between the metal layer and the insulating layer to serve as intermediaries that distribute current uniformly. This intermediate structure prevents direct contact while achieving the desired current distribution uniformity through controlled impedance matching and field distribution.
Solution Approach 2:
The patent introduces a vertical dimension to the structure by adding intermediate layers between the metal layer and insulating layer. This dimensional approach allows for improved current distribution without significantly increasing lateral complexity, as the enhancement is achieved through the vertical stacking of functional layers.
Data Source
AI summary
A semiconductor device is provided, which includes a semiconductor epitaxial structure, a first insulating layer, a metal layer, a second insulating layer, a first electrode pad, a second electrode pad, and an intermediate structure. The semiconductor epitaxial structure includes an active region and has a first sidewall and a first upper surface. The first insulating layer covers the first sidewall and the first upper surface of the semiconductor epitaxial structure and has a second upper surface. The metal layer is located on the first insulating layer. The second insulating layer is located on the metal layer. The first electrode pad and the second electrode pad are located on the second insulating layer. The intermediate structure is located between the first insulating layer and the metal layer. The second upper surface of the first insulating layer has a portion directly contacts the metal layer.