Semiconductor Conductive Layer Composition for Low Resistivity and Strain
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Solution Overview
Problem
Existing semiconductor devices face challenges in managing strain and interface resistivity in conductive layers due to variations in metal concentrations, leading to issues like stress migration and electromigration, particularly in areas with varying contact areas and volumes.
Innovation Solution
The semiconductor device employs conductive layers with varying concentrations of a first metal, such as tin, to manage strain and resistivity by increasing the concentration in smaller areas for reduced interface resistivity and lowering it in larger areas to minimize bond strain, using methods like sputtering and CVD to control metal composition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the concentration of first metal is increased in smaller contact areas, then interface resistivity is reduced, but bond strain increases in larger areas
Solution Approach 1:
The patent applies local quality by varying the concentration of first metal (e.g., tin) in different regions of the conductive layer. Specifically, the concentration is set to be higher in contact areas (e.g., 70-90 at%) where low interface resistivity is critical, and lower in non-contact areas (e.g., 10-30 at%) where bond strain must be minimized. This spatial variation in material composition optimizes both electrical and mechanical properties in their respective locations.
Solution Approach 2:
The patent implements parameter changes by controlling the concentration of first metal as a variable parameter across different regions of the conductive layer. Through sputtering or CVD processes, the metal concentration is adjusted from 70-90 at% in contact areas to 10-30 at% in non-contact areas, thereby dynamically optimizing the balance between interface resistivity and bond strain based on local functional requirements.
2Ease of manufacture
If uniform metal concentration is used throughout the conductive layer, then manufacturing is simplified, but both stress migration and electromigration occur in all areas
Solution Approach 1:
The patent applies local quality by implementing different metal concentrations in different regions: higher concentration (70-90 at%) in contact areas to prevent electromigration and stress migration, and lower concentration (10-30 at%) in non-contact areas to minimize bond strain. This regional differentiation addresses reliability concerns without requiring complete uniformity throughout the entire structure.
Solution Approach 2:
The patent segments the conductive layer into functionally distinct regions with different metal concentrations. The contact areas are segmented with high metal content for electrical stability, while non-contact areas are segmented with low metal content for mechanical stability. This segmentation allows each region to be optimized for its specific function while maintaining overall manufacturability through controlled deposition processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances process reliability by reducing failures like stress migration and electromigration, ensuring satisfactory conduction and increased contact strength through optimized metal distribution.
Implementation Method 1
using methods like sputtering and CVD to control metal composition
Implementation Method 2
using methods like sputtering and CVD to control metal composition
Data Source
AI summary
A semiconductor device includes first conductive layers, a width in a first direction thereof being a first width, a second conductive layer arranged with first conductive layers, a smaller one of a width in the first direction thereof and a width in a second direction thereof being a second width that is larger than the first width, a third conductive layer in contact with one end portion of at least one of first conductive layers, and a fourth conductive layer in contact with one end portion of the second conductive layer. The at least one of first conductive layers and the second conductive layer contain a first metal, a second metal, and oxygen (O). A concentration of the first metal of the at least one of first conductive layers is higher than a concentration of the first metal of the second conductive layer.