Semiconductor Layer Growth on Mica With Controlled Self-Separation
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Solution Overview
Problem
Current methods for growing semiconductor layers face challenges such as high costs and integration issues with alumina substrates, and lattice mismatch and thermal expansion differences with silicon substrates lead to defects and cracks, while sapphire and silicon carbide substrates have complex manufacturing processes and low success rates.
Innovation Solution
A method involving a mica substrate where semiconductor films are deposited using van der Waals force heteroepitaxy, with controlled cooling to self-separate the films, reducing lattice mismatch impacts and enabling reuse of the substrate after cleaning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If semiconductor layers are grown on silicon substrates using hetero-epitaxy technology, then the cost is reduced and integration with mature silicon semiconductor industry is improved, but lattice mismatch and thermal expansion coefficient differences cause defects and cracks in the formed semiconductor layers
Solution Approach 1:
The patent uses a buffer layer as an intermediary between the silicon substrate and the semiconductor layer. This buffer layer has a composition gradient that gradually transitions from silicon-rich to semiconductor-rich, serving as a mediator that reduces the lattice mismatch and thermal expansion coefficient differences, thereby preventing defects and cracks while maintaining cost-effectiveness and industry integration
2Reliability
If alumina substrates are used for growing semiconductor layers, then the substrate provides good growth properties, but the cost is much higher and integration with silicon semiconductor industry is difficult
Solution Approach 1:
The patent changes the substrate material parameter from alumina to silicon, and compensates for the resulting growth quality issues by adjusting other parameters such as introducing a buffer layer with composition gradient, controlling deposition temperature, and optimizing deposition conditions to achieve good semiconductor layer growth on cost-effective silicon substrates
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a high success rate and low-cost semiconductor layer growth with reduced lattice mismatch issues, allowing for simplified preparation and cost-effective substrate reuse.
Implementation Method 1
the deposition of the plurality of semiconductor films on the mica substrate can be achieved through van der Waals force heteroepitaxy
Implementation Method 2
cooling the semiconductor substrate at a cooling rate to separate the plurality of semiconductor films from the mica substrate
Data Source
AI summary
A method for preparing a semiconductor layer comprises the following steps: providing a mica substrate; depositing a plurality of semiconductor films on the mica substrate to form a semiconductor substrate; and cooling the semiconductor substrate at a cooling rate to separate the plurality of semiconductor films from the mica substrate to obtain a semiconductor layer, wherein the cooling rate ranges from 10° C./min to 50° C./min. Herein, the plurality of semiconductor films comprise a first semiconductor film and a second semiconductor film, the first semiconductor film is formed at a first temperature, the second semiconductor film is formed at a second temperature, the first temperature is lower than the second temperature, and the first semiconductor film is disposed between the mica substrate and the second semiconductor film.