Semiconductor Protective Layer Structure for Moisture and Peeling Resistance
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving reliable electrical performance and moisture resistance due to the limitations of existing protective layer structures, particularly in wide bandgap semiconductor chips like SiC, where stress and moisture intrusion can lead to peeling and deterioration.
Innovation Solution
The semiconductor device incorporates a structure with a silicon nitride film as the second inorganic film, featuring through holes that expose the first main surface and an organic film embedded within these holes, creating an uneven adhesion region that enhances connection strength and extends the moisture intrusion path, thereby improving reliability and protecting against stress and moisture.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional protective layer structure is used, then the device structure is simple, but peeling occurs and moisture intrusion happens leading to deterioration
Solution Approach 1:
The protective layer is divided into multiple inorganic films (first inorganic film and second inorganic film) with an organic film in between. This segmentation creates distinct functional layers: the first inorganic film provides adhesion to the substrate, the organic film provides moisture barrier properties, and the second inorganic film provides stress relief and sealing. This segmented structure prevents peeling and moisture intrusion that occur in conventional single-layer protective structures.
Solution Approach 2:
The patent uses a composite structure combining organic and inorganic materials in a layered configuration. The organic film (epoxy resin or polyimide) provides excellent moisture barrier properties, while the inorganic films (silicon oxide, silicon nitride, or silicon oxynitride) provide mechanical strength, adhesion, and stress management. This composite material approach creates a protective layer system that simultaneously achieves high reliability against moisture and stress without excessive complexity.
2Strength
If the organic film is directly deposited on the inorganic film, then the manufacturing process is simple, but peeling occurs reducing connection strength
Solution Approach 1:
The patent applies different material properties to different layers based on their specific functions. The first inorganic film is designed with high adhesion to the semiconductor substrate, the organic film is designed with flexibility and moisture barrier properties, and the second inorganic film is designed with stress relief capabilities. This local optimization of material properties at each layer prevents peeling while maintaining manufacturing feasibility.
Solution Approach 2:
The structure embeds the organic film within the inorganic film layers, creating a nested configuration where the organic film is protected by the first inorganic film on one side and the second inorganic film on the other side. This nested structure enhances connection strength by preventing direct exposure of the organic film to mechanical stress while maintaining the integrity of the entire protective layer system.
Data Source
AI summary
A semiconductor device including a chip having a main surface, a first inorganic film including an insulator and covering the main surface, a second inorganic film including an insulator and covering the first inorganic film, at least one through hole formed in the second inorganic film, and an organic film embedded in the through hole and covering the second inorganic film.