Semiconductor Layer Stack for Uniform Power Transmission Structures
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Solution Overview
Problem
In semiconductor devices, the integration of advanced features leads to challenges in maintaining uniform thickness and preventing impurity diffusion, resulting in defects in power transmission structures due to within-wafer thickness variations and impurity concentration differences.
Innovation Solution
Incorporating an etch stop layer with a higher impurity concentration than the substrate, and a protective layer with carbon or oxygen elements, to control impurity diffusion and reduce thickness variations, thereby improving the formation of power transmission structures and overall electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If advanced features are integrated to increase device functionality, then device versatility is improved, but within-wafer thickness variations increase leading to defects in power transmission structures
Solution Approach 1:
An etch stop layer is formed on the lower surface of the substrate before subsequent processing steps. This layer prevents further thickness variations from developing during etching and processing, thereby maintaining thickness uniformity in the final power transmission structures despite advanced device integration
Solution Approach 2:
The etch stop layer acts as an intermediary between the substrate and the power transmission structure. It mediates the thickness control by providing a reference plane that prevents excessive etching and ensures uniform thickness of overlying layers, resolving the contradiction between device complexity and manufacturing precision
2Reliability
If impurity concentration is increased to improve electrical characteristics, then electrical performance is improved, but impurity diffusion increases causing defects in power transmission structures
Solution Approach 1:
A protective layer containing carbon or oxygen elements is introduced as an intermediary barrier between regions with different impurity concentrations. This layer prevents impurity diffusion while allowing the high impurity concentration regions to maintain their electrical characteristics
Solution Approach 2:
The protective layer is formed as a composite material containing silicon, carbon, and oxygen elements (such as silicon oxycarbide). This composite structure provides both mechanical stability and impurity diffusion barrier properties, enabling high impurity concentration doping without harmful diffusion effects
3Manufacturing precision
If protective layer with carbon or oxygen elements is added to control impurity diffusion, then impurity distribution control is improved, but device complexity increases
Solution Approach 1:
The protective layer serves multiple functions simultaneously: it acts as an impurity diffusion barrier, provides etch selectivity reference, and serves as a mechanical support layer. This multi-functionality reduces the need for additional separate layers, thereby limiting the increase in device complexity while maintaining precise impurity distribution control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the uniformity of semiconductor device layers, reduces defects in power transmission structures, and improves electrical performance by maintaining controlled impurity distributions and reducing within-wafer thickness variations.
Implementation Method 1
a protective layer on a lower surface of the substrate, including silicon (Si) or silicon germanium (SiGe), and including at least one of a carbon (C) element or an oxygen (O) element
Implementation Method 2
an etch stop layer on a lower surface of the protective layer
Data Source
AI summary
A semiconductor device includes a substrate; an active region extending on the substrate in a first direction; a protective layer on a lower surface of the substrate; an etch stop layer on a lower surface of the protective layer; a device isolation layer defining the active region; a gate structure on the active region and extending in a second direction, intersecting the first direction; a source/drain region on the active region on both lateral sides of the gate structure; a contact structure connected to the source/drain region; and a power transmission structure electrically connected to the contact structure.