Semiconductor Layer Separation via Single Mask Etching
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Solution Overview
Problem
Existing methods for separating regions of a semiconductor layer and introducing a coupling-out structure are complex, costly, and inefficient, resulting in roughened chip edges that complicate optical inspections.
Innovation Solution
A method using a single mask and etching step to introduce a coupling-out structure and separate semiconductor regions, employing a hard mask and dry etching with plasma, which simplifies the process and produces a smooth edge for improved optical inspection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple masks and etching methods are used to introduce coupling-out structure and separate semiconductor regions, then the coupling-out structure can be introduced and regions separated, but the process complexity increases and production time extends
Solution Approach 1:
The patent combines the introduction of the coupling-out structure and the separation of semiconductor regions into a single etching step using one mask. The mask is designed with specific patterns that simultaneously define both the coupling-out structure areas and the separation trench locations, eliminating the need for multiple masks and etching steps while achieving both functions reliably
Solution Approach 2:
The single mask serves multiple functions: it defines the coupling-out structure regions, defines the separation trench locations, and controls both processes in one application. This multi-functional mask design reduces process complexity while maintaining the reliability of structure introduction and region separation
2Reliability
If multiple masks and etching methods are used to introduce coupling-out structure and separate semiconductor regions, then the coupling-out structure can be introduced and regions separated, but production time increases
Solution Approach 1:
The patent merges the introduction of coupling-out structures and separation of regions into one simultaneous etching process. By using a single mask with integrated patterns, both operations complete in one production cycle, significantly reducing production time while ensuring reliable region separation through the carefully designed mask geometry
Solution Approach 2:
The mask is designed in advance with pre-defined patterns that simultaneously specify both coupling-out structure locations and separation trench positions. This preliminary design allows the single etching step to execute both functions correctly without requiring sequential operations, thereby accelerating production
3Productivity
If chip edges are roughened during separation, then regions can be separated from the semiconductor layer, but optical inspection reliability decreases due to wavy edges
Solution Approach 1:
The patent applies different qualities to different regions: the mask is designed to protect specific edge areas from etching while allowing other areas to be etched for separation. This creates locally differentiated surface qualities where most edges remain smooth for inspection, while separation still occurs effectively in the designated regions through the mask's strategic opening patterns
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method reduces complexity and cost, enabling efficient separation and structuring of semiconductor layers, enhancing the reliability of optical inspections by providing a clear, non-roughened edge for defect monitoring.
Implementation Method 1
a gaseous or liquid etching medium is used as etchant... the etching method is a dry etching method... a plasma is used in the dry etching method
Data Source
AI summary
The invention relates to a method for separating regions of a semiconductor layer and for introducing an outcoupling structure into an upper side of the semiconductor layer, the outcoupling structure being provided to couple light out of the semiconductor layer. The upper side of the semiconductor layer is covered by a mask having first openings for introducing the outcoupling structure and at least a second opening, which is provided to introduce a separating trench into the semiconductor layer. With the aid of an etching method, the outcoupling structure is introduced into the upper side of the semiconductor layer in the region of the first openings and simultaneously a separating trench passing through the semiconductor layer is introduced into the semiconductor layer via the second opening, and a region of the semiconductor layer is separated.