Semiconductor Layer Thickness Metrology via Photomodulation
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Solution Overview
Problem
Current methods for measuring the thickness of semiconductor deposition layers lack precision, are complex, and require significant time, making it difficult to accurately determine layer thicknesses in a short period.
Innovation Solution
A metrology system comprising an implantation apparatus, a deposition apparatus, and a metrology apparatus that uses photomodulation to generate modulated free carriers in the implantation region, allowing for non-destructive and non-contact measurement of semiconductor layer thickness by detecting interference patterns from a probe beam reflected off the layer and implantation region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional measurement techniques are used for deposition layer thickness, then measurement can be performed, but measurement precision is insufficient and measurement time is excessive
Solution Approach 1:
An implantation region is formed in the semiconductor substrate before the deposition layer is deposited. This preliminary structural modification creates a built-in reference that enables rapid and precise thickness measurement without requiring complex external reference structures during the measurement process.
Solution Approach 2:
The implantation region serves as an intermediary reference structure that facilitates the measurement process. By providing a known reference point within the substrate, it enables the measurement system to accurately determine deposition layer thickness through comparison, significantly improving both precision and speed.
2Measurement precision
If conventional measurement techniques are used for deposition layer thickness, then measurement can be performed, but the measurement process is complex
Solution Approach 1:
The implantation region is prepared in advance during substrate processing, integrating the reference structure creation into the existing manufacturing flow. This eliminates the need for separate, complex reference structure fabrication steps that would otherwise be required for precise measurements.
Solution Approach 2:
The implantation region acts as a built-in intermediary reference that simplifies the measurement process. Instead of requiring complex external reference structures or multiple measurement steps, the system uses this pre-formed region to directly enable accurate thickness determination through a simplified optical or electrical measurement process.
3Reliability
If conventional measurement techniques are used for deposition layer thickness, then measurement can be performed, but the techniques are destructive or require contact
Solution Approach 1:
The implantation region serves as a non-destructive reference structure that enables contactless or minimally invasive measurement. This intermediary element allows the measurement process to proceed without damaging the deposition layer or requiring physical contact that could contaminate or alter the sample, thereby maintaining both reliability and manufacturing simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise, rapid, and non-destructive measurement of semiconductor layer thickness, improving the accuracy and efficiency of semiconductor device fabrication.
Implementation Method 1
A photomodulation source is configured to generate modulated free carriers in the implantation region of the semiconductor substrate
Implementation Method 2
A probe source is configured to provide a probe beam on the semiconductor layer and the implantation region
Data Source
AI summary
A method for thickness measurement includes forming an implantation region in a semiconductor substrate. A semiconductor layer is formed on the implantation region of the semiconductor substrate. Modulated free carriers are generated in the implantation region of the semiconductor substrate. A probe beam is provided on the semiconductor layer and the implantation region of the semiconductor substrate with the modulated free carriers therein. The probe beam reflected from the semiconductor layer and the implantation region is detected to determine a thickness of the semiconductor layer.