Semiconductor Layout Boundary Pattern Orientation
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Solution Overview
Problem
In semiconductor device layout formation, the precision of trimming processes is compromised due to overlapping areas in boundary regions, where the shifting edges of patterned photoresist can shade or expose unintended areas, leading to pattern errors.
Innovation Solution
The method involves forming first and second line patterns that extend along different directions in boundary areas compared to adjacent areas, ensuring larger minimum distances between overlapping areas, allowing for precise trimming and transfer of patterns without exposing or shading overlapping regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If line patterns are formed with standard extending directions in boundary areas, then the layout density is maintained, but the precision of trimming processes deteriorates due to overlapping areas
Solution Approach 1:
The patent applies different extending directions for line patterns in boundary areas compared to inner areas. Specifically, in boundary areas, first line patterns extend along a first direction while second line patterns extend along a second direction that is different from the first direction. This local variation in pattern orientation increases the minimum distance between overlapping areas in boundary regions, preventing pattern errors during trimming processes while maintaining standard layout density in inner areas.
2Area of stationary object
If the minimum distance between overlapping areas is reduced, then the layout density is improved, but the precision of trimming processes deteriorates due to edge shifting of patterned photoresist
Solution Approach 1:
The patent implements direction-specific pattern arrangement where first line patterns extend along a first direction and second line patterns extend along a second direction in boundary areas. This local orientation strategy ensures that overlapping areas between first and second line patterns are sufficiently separated, maintaining trimming precision despite high layout density requirements.
Solution Approach 2:
The patent resolves the distance constraint by changing the dimensional arrangement of line patterns. Instead of maintaining parallel extending directions, the patent uses different extending directions (first direction vs. second direction) for different line pattern sets, effectively utilizing angular separation to increase the minimum distance between overlapping areas while preserving layout compactness.
Data Source
AI summary
A method of forming a layout of a semiconductor device includes the following steps. First line patterns extend along a first direction in a first area and a second area, but the first line patterns extend along a second direction in a boundary area. Second line patterns extend along a third direction in the first area and the second area, but the second line patterns extend along a fourth direction in the boundary area, so that minimum distances between overlapping areas of the first line patterns and the second line patterns in the boundary area are larger than minimum distances between overlapping areas of the first line patterns and the second line patterns in the first area and the second area. A trimming process is performed to shade the first line patterns and the second line patterns in the boundary area and the second area.