Semiconductor Cell Layout With Isolation Dummy Gates for Leakage Control
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Solution Overview
Problem
The scaling down of semiconductor devices, such as MOSFETs, leads to compromised device packing density and performance due to device layout and isolation issues, where leakage between neighboring devices occurs, and the isolation dummy gate disconnects active regions, affecting carrier mobility and device performance.
Innovation Solution
The semiconductor device layout is modified by selectively adjusting the length of active regions in P-type and N-type FETs using isolation dummy gates, which are formed by cutting doped regions and replacing them with dielectric materials, allowing for continuous active regions across multiple transistors and improving carrier mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If isolation dummy gates are used to prevent leakage between neighboring devices, then device isolation is improved, but active regions are disconnected affecting carrier mobility
Solution Approach 1:
The gate structure is segmented into functional gates and isolation dummy gates. The isolation dummy gates are specifically positioned at cell edges to provide electrical isolation between neighboring devices without affecting the continuity of active regions within the same cell, thus resolving the contradiction between device isolation and active region continuity.
2Productivity
If device size is scaled down to increase packing density, then productivity is improved, but leakage between neighboring devices increases
Solution Approach 1:
Isolation dummy gates are introduced as intermediary structures between neighboring devices. These dummy gates act as mediators that provide electrical isolation and prevent leakage currents while allowing the devices to be closely packed, thus enabling high packing density without suffering from leakage issues.
3Reliability
If active region length is increased to improve carrier mobility, then device performance is improved, but device area increases reducing packing density
Solution Approach 1:
The active region length is optimized locally within each device cell to achieve the desired carrier mobility. By carefully designing the active region dimensions and positioning isolation dummy gates at cell edges, the patent achieves sufficient carrier mobility while minimizing the overall device area, thus resolving the contradiction between performance and packing density.
Data Source
AI summary
A cell region of a semiconductor device includes a first and second isolation dummy gates extending along a first direction. The semiconductor device further includes a first gate extending along the first direction and between the first isolation dummy gate and the second isolation dummy gate. The semiconductor device includes a second gate extending along the first direction, the second gate being between the first isolation dummy gate and the second isolation dummy gate relative to a second direction perpendicular to the first direction. The semiconductor device also includes a first active region and a second active region. The first active region extending in the second direction between the first isolation dummy gate and the second isolation dummy gate. The first active region has a first length in the second direction, and the second active region has a second length in the second direction different from the first length.