Semiconductor Layout Offset to Mitigate CMOS Latch-Up

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Solution Overview

Problem

Semiconductor devices often experience latch-up due to the formation of parasitic transistors that create a low impedance path between power supply rails, leading to potential failure, particularly in CMOS devices where voltage spikes can trigger a feedback loop and excessive current flow.

Innovation Solution

The semiconductor device design offsets conductors associated with different power supply rails, increasing the distance between them to mitigate the formation of parasitic transistors, thereby reducing the likelihood of latch-up by requiring a higher voltage spike to create a current path between the supply rails.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If conductors are placed close together to reduce device area, then area is reduced, but parasitic transistors form creating latch-up paths

Engineering Contradiction:
Improvedevice areaVSAvoidlatch-up resistance
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent offsets conductors in the second direction (perpendicular to the first direction), utilizing spatial dimensionality to increase separation distance between power supply rail nodes without significantly increasing the overall device footprint. This dimensional approach allows maintaining compact area while achieving adequate conductor separation to prevent parasitic transistor formation.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If conductors are offset to increase separation distance, then latch-up is mitigated, but device area increases

Engineering Contradiction:
Improvelatch-up resistanceVSAvoiddevice area
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent employs asymmetric offset positioning of conductors relative to each other in the second direction, rather than symmetric arrangement. This asymmetric configuration optimizes the separation distance to be sufficient for preventing latch-up while minimizing the overall area occupied by the conductor layout.

Inventive Principle:
Principle #4Asymmetry

3Reliability

If conductor separation is increased to prevent parasitic transistor formation, then latch-up resistance improves, but manufacturing complexity increases

Engineering Contradiction:
Improvelatch-up resistanceVSAvoidlayout complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the conductor arrangement into distinct directional components: conductors extending in the first direction with offset positioning in the second direction. This segmentation simplifies the layout design by establishing clear directional guidelines for conductor placement, making the design process more systematic and manufacturable.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS12176289B2Semiconductor device design mitigating latch-up
Publication Date: 2024.12.24 INTERNATIONAL BUSINESS MACHINE CORPORATION
  • US12176289B2 patent drawing
  • US12176289B2 patent drawing
  • US12176289B2 patent drawing

AI summary

Apparatus for mitigating latch-up within semiconductor devices. A semiconductor device includes a first conductor, a second conductor, and a first gate conductor. The first conductor extends in a first direction, receives a first power supply signal, and is connected to a first electrode. The second conductor extends in the first direction, receives a second power supply signal different from the first power supply signal, and is connected to a second electrode. The first conductor is offset from the second conductor in a second direction perpendicular to the first direction in a top-down view to mitigate formation of parasitic devices within the semiconductor device electrically connecting the first conductor with the second conductor. The first gate conductor is disposed adjacent to the first conductor and the second conductor, is disposed on the first electrode and the second electrode, and receives an input signal.