Semiconductor Layout Design for Leakage Current and Antenna Effect Control

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Solution Overview

Problem

As semiconductor devices shrink in size, they face challenges such as max transition time violation, wiring congestion, and gate oxide breakdown due to the antenna effect when applying multi-fanout and super cut-off technologies, which affect power consumption and leakage current in sleep mode.

Innovation Solution

A method of designing semiconductor devices using electronic design automation (EDA) tools, which includes generating an improved layout pattern for pre-routing lines that connect buffers to head circuits, performing clock tree synthesis, and optimizing signal line layouts to reduce leakage current and prevent antenna effects, while ensuring efficient resource use and minimizing transition time violations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If multi-fanout and super cut-off technology are applied to reduce power consumption and leakage current, then power efficiency is improved, but max transition time violation, wiring congestion, and gate oxide breakdown due to antenna effect occur

Engineering Contradiction:
Improveleakage currentVSAvoidgate oxide breakdown
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

The patent segments the power line into multiple sections with separate via connections to different ground points. This segmentation distributes the antenna effect across multiple smaller segments rather than concentrating it in a single long power line, thereby preventing gate oxide breakdown while maintaining the super cut-off functionality for reducing leakage current.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces intermediate via connections that act as mediators between the power line and ground. These via connections provide multiple discharge paths for accumulated charges, preventing excessive voltage buildup that would cause gate oxide breakdown, while still allowing the power-gating circuit to effectively control leakage current.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If pre-routing lines are optimized before signal line routing, then wiring congestion is reduced, but design complexity increases

Engineering Contradiction:
Improvewiring congestionVSAvoiddesign process
Core Design Contradiction:
Ease of manufactureVSDevice complexity

Solution Approach 1:

The patent performs preliminary routing of pre-routing lines (power lines and control lines) before routing the signal lines. This preliminary action reserves appropriate spaces for power distribution and control signals, preventing wiring congestion in later stages while using systematic EDA tools to manage the increased design process complexity.

Inventive Principle:
Principle #10Preliminary action

3Use of energy by moving object

If power-gating circuit is used to reduce power consumption, then energy efficiency is improved, but max transition time violation occurs

Engineering Contradiction:
Improvepower consumptionVSAvoidtransition time
Core Design Contradiction:
Use of energy by moving objectVSLoss of time

Solution Approach 1:

The patent applies different quality characteristics to different parts of the power-gating circuit. The power line is designed with multiple via connections for stable voltage supply, while the control line is optimized for fast signal transmission. This local quality differentiation allows the circuit to achieve both low power consumption and acceptable transition times by optimizing each component for its specific function.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS10552566B2Method of designing semiconductor device
Publication Date: 2020.02.04 SAMSUNG ELECTRONICS CO LTD
  • US10552566B2 patent drawing
  • US10552566B2 patent drawing
  • US10552566B2 patent drawing

AI summary

A method of designing a semiconductor device including a memory device, a buffer, and a plurality of head circuits connected to the buffer is disclosed. The method includes generating a layout pattern of a power line of the semiconductor device, generating an improved layout pattern of a pre-routing line that connects the buffer to the head circuits, and generating a layout pattern of signal lines of the semiconductor device. The signal lines include both normal signal lines and signal lines for a central clock of the semiconductor device. A layout of the semiconductor device includes a plurality of layers.