Semiconductor Layout Design for Line Width Uniformity
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Solution Overview
Problem
Current methods face challenges in achieving uniform line widths and feature densities, especially at line end portions, requiring complex simulations and lengthy calculation times for accurate correction in semiconductor device fabrication.
Innovation Solution
A semiconductor device layout design method involving real and dummy features, where dummy features are placed in parallel to real features, with line end portion uniformization dummy features ensuring even spacing and connection, reducing the need for simulation and enhancing accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dummy features are placed to achieve uniform feature densities, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent segments dummy features into two distinct types: standard dummy features for general uniformity and line end portion uniformization dummy features specifically for line end accuracy. This segmentation allows each type to address specific precision requirements without unnecessarily complicating the overall layout.
Solution Approach 2:
The patent applies different dummy feature configurations to different locations: standard dummy features are placed in regular intervals for general uniformity, while line end portion uniformization dummy features are specifically positioned at line end portions. This local differentiation optimizes precision where needed without adding complexity throughout the entire device.
2Manufacturing precision
If accurate simulation is performed to correct feature dimensions, then manufacturing precision is improved, but loss of time increases
Solution Approach 1:
The patent performs preliminary correction by strategically placing dummy features during the design stage to pre-compensate for optical proximity effects and microloading effects. This preliminary action eliminates the need for time-consuming post-fabrication simulations and corrections, achieving dimensional accuracy upfront.
Solution Approach 2:
The patent uses simple geometric dummy features (basic shapes with standard dimensions) rather than complex simulation models. These simple dummy features are computationally inexpensive to generate and process, providing accurate correction without requiring enormous calculation resources or time.
3Productivity
If circuit pattern size is reduced to increase integration, then productivity is improved, but manufacturing precision deteriorates
Solution Approach 1:
The patent changes the parameter of feature density by introducing dummy features with the same pitch as real features. This parameter change compensates for the reduced absolute size of circuit patterns, maintaining uniform optical and etching conditions despite smaller feature dimensions, thereby preserving manufacturing precision while enabling higher integration.
Data Source
AI summary
A semiconductor device includes: a plurality of line features including at least one real feature which includes a gate electrode portion, and at least one dummy feature. Two of multiple ones of the dummy feature, and at least one of the line features interposed between the two dummy features and including the at least one real feature form parallel running line features which are evenly spaced. The parallel running line features have an identical width, and line end portions of the parallel running line features are substantially flush. Line end portion uniformization dummy features are formed on extensions of the line end portions of the parallel running line features. The line end portion uniformization dummy features include a plurality of linear features each having a same width as each of the line features and spaced at intervals equal to an interval between each adjacent pair of the line features.