Multi-Channel Semiconductor Layout for Low-Capacitance Scaling
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices face challenges in reducing capacitance between contacts and ensuring electrical stability as pitch sizes decrease, which affects device performance and integration.
Innovation Solution
The semiconductor device incorporates a design with first and second channel separation structures, gate structures, and source/drain patterns, along with sheet patterns and gate separation structures, to improve device performance and integration by optimizing the layout and fabrication process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If pitch size is decreased to increase device density, then device integration is improved, but capacitance between contacts increases and electrical stability deteriorates
Solution Approach 1:
The device is divided into multiple independent channel separation structures that are spaced apart from each other. This segmentation allows each structure to independently manage electrical characteristics, reducing parasitic capacitance between contacts while maintaining high device integration through the multi-channel architecture.
Solution Approach 2:
Different regions of the device are assigned different functional structures: channel separation structures are placed in specific locations to control electrical characteristics, gate structures are positioned to optimize current control, and source/drain patterns are configured to minimize capacitance. This local optimization of structure placement and configuration improves electrical stability while maintaining high integration.
2Reliability
If multi-gate transistor structure is used to improve current control, then device performance is improved, but device complexity increases
Solution Approach 1:
The channel separation structures serve multiple functions simultaneously: they act as isolation barriers between channels, provide mechanical support for the multi-gate architecture, and function as part of the electrical control network. This multi-functionality reduces the need for additional separate components, thereby managing device complexity while maintaining improved current control.
Solution Approach 2:
Multiple functional elements are merged into integrated structures: the gate structures are combined with channel separation structures, source/drain patterns are integrated with channel structures, and insulating films are merged into the channel separation structures. This merging reduces the total number of discrete components and simplifies the overall device fabrication process while maintaining the multi-gate transistor's superior current control capabilities.
Data Source
AI summary
A semiconductor device includes a first and second channel separation structures extending in a first direction and spaced apart from each other in a second direction, first gate structures spaced apart from each other in the first direction between the first and second channel separation structures and in contact with the first and second channel separation structures, first and second channel patterns including first and second sheet patterns, respectively, spaced apart from each other in a third direction and in contact with the corresponding first and second channel separation structures, first and second source/drain patterns between the first and second channel separation structures, the first source/drain patterns in contact with the first channel patterns and the first channel separation structure, the second source/drain patterns in contact with the second channel patterns and the second channel separation structure, and first gate separation structures between the first and second source/drain patterns.