Semiconductor Design Layout Misalignment Correction

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Solution Overview

Problem

In highly integrated semiconductor devices, misalignments during the fabrication process can lead to narrow gaps between patterns, causing damage or performance degradation of insulating films, which existing technologies struggle to correct effectively.

Innovation Solution

A method involving a computing device that separates a target layer of patterns from an original design layout, shifts these patterns based on misalignment values, and combines them back into the original layout to generate a corrected design layout, facilitating the fabrication of a semiconductor device with improved alignment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If misalignment occurs in semiconductor device fabrication, then manufacturing complexity increases, but insulating film performance degrades due to narrow gaps between misaligned patterns

Engineering Contradiction:
Improvepattern alignmentVSAvoidinsulating film performance
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies preliminary action by calculating and applying misalignment correction values to the design layout before fabrication. The system separates target layers, calculates correction values based on expected misalignment, shifts patterns accordingly, and combines them back into the design layout. This pre-correction prevents the narrow gap formation that would otherwise occur during fabrication, thereby protecting insulating film performance before the actual manufacturing process begins.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If design layout correction is applied to prevent misalignment, then insulating film performance is protected, but manufacturing process complexity increases

Engineering Contradiction:
Improveinsulating film performanceVSAvoidmanufacturing process
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the design layout into separate target layers that can be independently processed. The system separates specific layers requiring misalignment correction from the original design layout, applies correction values to only those layers, and then combines them back. This selective approach corrects only the necessary portions rather than processing the entire design layout, thereby reducing the overall manufacturing process complexity while still protecting insulating film performance.

Inventive Principle:
Principle #1Segmentation

3Manufacturing precision

If misalignment correction is performed on all layers, then alignment precision improves, but processing time increases

Engineering Contradiction:
Improvealignment precisionVSAvoidcorrection processing time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent applies local quality by identifying and applying misalignment correction only to specific target layers that require it, rather than uniformly processing all layers. The system determines which layers need correction based on their specific alignment requirements and applies correction values selectively. This localized approach maintains high alignment precision for critical layers while minimizing the overall processing time by avoiding unnecessary corrections on layers that don't require them.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20240202424A1Method of correcting design layout of semiconductor device, computing device performing the same, and method of fabricating semiconductor device using the same
Publication Date: 2024.06.20 SAMSUNG ELECTRONICS CO LTD
  • US20240202424A1 patent drawing
  • US20240202424A1 patent drawing
  • US20240202424A1 patent drawing

AI summary

A computing device separates a first target layer including a plurality of target patterns from an original design layout, shifts the plurality of target patterns in the first target layer based on misalignment values at positions of the plurality of target patterns to generate a second target layer, and combines the second target layer with the original design layout from which the first target layer is separated to generate a corrected design layout.