Semiconductor Layout RC Netlists with Element-Level Sensitivity

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Solution Overview

Problem

Existing semiconductor device design processes fail to efficiently account for parasitic resistances and capacitances during the design phase, leading to prolonged optimization times due to the inability to identify which elements contribute to performance issues.

Innovation Solution

Incorporating human-readable element names into RC netlists and performing sensitivity analyses through decoupling and parameterization of parasitic values to identify performance sensitivities, allowing for optimized layout adjustments.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If traditional design processes are used without parasitic analysis, then the design process is simpler, but the optimization time is prolonged and performance issues cannot be efficiently identified

Engineering Contradiction:
Improvedesign efficiencyVSAvoidoptimization time
Core Design Contradiction:
ProductivityVSLoss of time

Solution Approach 1:

The patent performs parasitic extraction and sensitivity analysis during the design phase, before fabrication. By calculating parasitic values and identifying sensitive elements in advance, the method enables targeted layout optimizations that prevent performance issues rather than detecting them after fabrication, thereby reducing overall optimization time and improving design efficiency

Inventive Principle:
Principle #10Preliminary action

2Measurement precision

If detailed parasitic analysis is performed on all elements, then performance accuracy is improved, but the complexity of the design process increases

Engineering Contradiction:
Improveperformance analysis accuracyVSAvoiddesign process complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent extracts and calculates parasitic values (resistance and capacitance) for individual layout elements separately, then uses sensitivity analysis to identify which elements have the greatest impact on performance. This allows the design process to focus detailed analysis only on the most critical elements rather than requiring equally detailed analysis of all elements, thereby maintaining high measurement precision while reducing design process complexity

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent applies sensitivity analysis to determine which specific layout elements have the greatest impact on device performance. By identifying these locally critical elements, the method enables targeted optimizations at specific locations in the layout rather than requiring uniform detailed analysis across the entire design, thus improving performance accuracy where it matters most while reducing overall process complexity

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20250245415A1System and Method for Fabricating a Semiconductor Device
Publication Date: 2025.07.31 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250245415A1 patent drawing
  • US20250245415A1 patent drawing
  • US20250245415A1 patent drawing

AI summary

A system for fabricating a semiconductor device includes one or more data processors configured to perform operations commanded by instructions stored in a non-transitory computer-readable medium. The instructions include receiving a layout including a plurality of elements, extracting parasitic values associated with the layout to generate a resistance and capacitance (RC) netlist, generating a modified RC netlist by adding element names of the elements of the layout to the RC netlist, performing a post-layout simulation on the modified RC netlist to determine whether the layout meets a predetermined specification, and fabricating a semiconductor device based on the layout when it is determined that the layout meets the predetermined specification. The RC netlist includes the extracted parasitic values. The modified RC netlist includes a netlist table storing the element names and the extracted parasitic values.