Semiconductor Layout With Variable Nanostructure Transistor Cells
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Solution Overview
Problem
As semiconductor devices continue to shrink in feature size to increase integration density, challenges arise in modulating performance and power efficiency without increasing device size, particularly in managing the work functions of transistors with varying quantities of nanostructures.
Innovation Solution
The approach involves designing semiconductor devices with cells that define transistors having different quantities of nanostructures, allowing for modulation of performance and power efficiency by varying the number and arrangement of nanostructures within a fixed device layout, using a gate-last process and forming nanostructures over fins on a semiconductor substrate with isolation regions, and employing epitaxial source/drain regions to improve performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but additional problems arise in modulating performance and power efficiency without increasing device size
Solution Approach 1:
The patent applies local quality by varying the number of nanostructures within different transistor instances while maintaining the same device layout. Each transistor can have a different quantity of nanostructures (e.g., 1, 2, 3, or 4 nanostructures) depending on the specific performance requirements of that transistor, allowing performance modulation without changing the overall device footprint or minimum feature size.
Solution Approach 2:
The patent implements dynamics by making the transistor characteristics adjustable through varying nanostructure counts. This allows the same device layout to dynamically support different performance modes (high-speed vs. high-efficiency) by selecting appropriate nanostructure quantities for different transistor instances, providing adaptability without increasing device size.
2Adaptability or versatility
If different quantities of nanostructures are used to modulate performance, then work functions can be varied, but device layout size must remain fixed
Solution Approach 1:
The patent uses local quality by assigning different nanostructure quantities to different transistor instances within the same device layout. This allows each transistor to have customized work function characteristics by varying the nanostructure count (1-4 nanostructures) while maintaining a fixed overall layout area, achieving performance differentiation without spatial expansion.
Solution Approach 2:
The patent applies parameter changes by varying the number of nanostructures as a key parameter to control work function and transistor performance. By changing this discrete parameter (number of nanostructures) rather than continuous geometric parameters, the patent achieves performance modulation within a fixed layout area, as different nanostructure quantities directly affect the electrical characteristics and work function of each transistor.
3Power
If more nanostructures are added to improve performance, then device performance increases, but device size tends to increase
Solution Approach 1:
The patent applies local quality by allowing different transistors within the same device to have different numbers of nanostructures based on their specific performance requirements. High-performance transistors can have more nanostructures (e.g., 3 or 4) while other transistors have fewer (1 or 2), optimizing overall device performance without uniformly increasing device size, as each transistor's nanostructure count is locally optimized rather than globally scaled.
Solution Approach 2:
The patent implements dynamics by enabling flexible selection of nanostructure quantities to match performance demands. The device can be configured with varying nanostructure counts across different transistor instances, allowing performance to be dynamically adjusted through design selection rather than physical scaling, thus achieving high performance in specific transistors without proportionally increasing the entire device area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the modulation of device performance and power efficiency without scaling up device sizes, achieving better performance for high-speed devices and higher efficiency for high-efficiency devices by optimizing the number and arrangement of nanostructures within the same layout.
Implementation Method 1
employing epitaxial source/drain regions to improve performance
Data Source
AI summary
In an embodiment, a method includes: placing a first cell in a device layout, the first cell defining a first transistor, the first transistor including a first quantity of first nanostructures; placing a second cell in the device layout directly adjacent to the first cell, the second cell defining a second transistor, the second transistor including a second quantity of second nanostructures, the second quantity being different than the first quantity; generating a lithography mask based on the device layout; and manufacturing a semiconductor device using the lithography mask.