Semiconductor Lead Branch Structure for Current Concentration and Warping

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Solution Overview

Problem

Existing semiconductor devices face challenges in alleviating current concentration and preventing warping of branch portions during manufacturing, particularly in GaN high electron mobility transistors (HEMTs), which can affect the device's performance and manufacturing precision.

Innovation Solution

The semiconductor device incorporates leads with tapered branch portions and basal portions that widen in the direction towards the main portion, alleviating current concentration and preventing warping, along with a sealing resin to secure the components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stress or pressure

If branch portions are made thin to reduce current concentration, then current concentration is alleviated, but warping occurs during manufacturing

Engineering Contradiction:
Improvecurrent concentrationVSAvoidwarping of branch portions
Core Design Contradiction:
Stress or pressureVSManufacturing precision

Solution Approach 1:

The lead structure implements local quality by varying the cross-sectional dimensions along its length. The branch portions have different thicknesses in the first direction (width) compared to the thickness in the second direction (height), creating an asymmetric profile that locally optimizes both current distribution and structural stability. Specifically, the branch portions are designed with smaller dimensions in the first direction to reduce current concentration, while maintaining sufficient height to prevent warping during manufacturing.

Inventive Principle:
Principle #3Local quality

2Stress or pressure

If lead branch portions are made thinner, then current concentration is reduced, but the leads become more prone to warping

Engineering Contradiction:
Improvecurrent concentrationVSAvoidwarping resistance
Core Design Contradiction:
Stress or pressureVSStability of the object's composition

Solution Approach 1:

The lead structure applies asymmetry by creating unequal dimensions in different directions. The branch portions have asymmetric cross-sections where the width (first direction) is deliberately made smaller than the height (second direction). This asymmetric geometry allows the lead to be thin enough to reduce current concentration in the width direction while maintaining sufficient height to provide structural stability and resist warping during the manufacturing process.

Inventive Principle:
Principle #4Asymmetry

Data Source

PatentUS20250210578A1Semiconductor device
Publication Date: 2025.06.26 ROHM CO LTD
  • US20250210578A1 patent drawing
  • US20250210578A1 patent drawing
  • US20250210578A1 patent drawing

AI summary

A semiconductor device includes a plurality of leads, a semiconductor element, and a sealing resin. The first lead includes a first main portion, and a plurality of first branch portions extending from the first main portion in a second direction, and aligned along the first direction. The first branch portion includes a first basal portion connected to the first main portion and a first connecting portion conductively bonded to a first electrode. A first width corresponding to a width of the first connecting portion in the first direction, is narrower than a second width corresponding to a width in the first direction, of a boundary between the first basal portion and the first main portion.