Semiconductor Device Heat Dissipation via Lead Frame

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Solution Overview

Problem

Semiconductor devices face a challenge in efficiently dissipating heat without increasing their size, as thicker main circuit wiring patterns are necessary for heat transfer but also lead to larger device sizes, resulting in temperature rises that can cause breakdown and malfunction.

Innovation Solution

A semiconductor device design featuring a laminated substrate with a metal heatsink on the rear surface, conductive circuit patterns on the front, and lead frames connected via solder to enhance heat transfer, with a case surrounding the edges and filled with sealing resin to increase heat capacity while maintaining a compact size.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If the thickness of the main circuit wiring pattern is increased to increase heat transfer capacity, then the heat transfer capability is improved, but the device size increases

Engineering Contradiction:
Improveheat transfer capabilityVSAvoiddevice size
Core Design Contradiction:
TemperatureVSVolume of moving object

Solution Approach 1:

The patent transitions from increasing wiring pattern thickness (one dimension) to utilizing multi-layer circuit board structures with multiple conductive layers (adding dimensional complexity). This allows heat transfer capacity to be increased through additional lateral heat dissipation paths in other layers, avoiding the need to increase the thickness of individual wiring patterns while maintaining compact device dimensions.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Volume of moving object

If the thickness of the main circuit wiring pattern is limited to maintain compact device size, then the device size is reduced, but the heat transfer capability becomes insufficient

Engineering Contradiction:
Improvedevice sizeVSAvoidheat transfer capability
Core Design Contradiction:
Volume of moving objectVSTemperature

Solution Approach 1:

The patent combines multiple conductive layers within the circuit board structure to create a distributed heat transfer network. By merging the thermal conduction functions of multiple thinner wiring layers, the system achieves heat transfer capability equivalent to or greater than a single thick wiring pattern, while maintaining compact device size and allowing for more efficient heat distribution across the device footprint.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design effectively transfers heat generated by semiconductor elements, preventing temperature rises and ensuring reliable operation within the operating range, while reducing the device's size compared to conventional designs.

Implementation Method 1

Heat generated by the semiconductor elements dissipates from the metal plate

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

Heat generated by the semiconductor elements dissipates from the metal plate

Methodology Applied
Scientific EffectHeat dissipation: Heat Sink

Data Source

PatentUS10461024B2Semiconductor device
Publication Date: 2019.10.29 FUJI ELECTRIC CO LTD
  • US10461024B2 patent drawing
  • US10461024B2 patent drawing
  • US10461024B2 patent drawing

AI summary

In a semiconductor device, first to fourth circuit patterns are formed on an insulating substrate in a case. A first end of a first lead frame is connected via solder to the first circuit pattern and another end of the first lead frame extends outside from the case. In the same way, a first end of a second lead frame is connected via solder to the fourth circuit pattern and another end extends outside from a case. Portions of the second and third circuit patterns are covered by the first lead frame and are respectively buried by insulating layers. In addition, a semiconductor element is provided via solder on a region of the first lead frame above the first circuit pattern. Wires electrically connect the semiconductor element and a region of the second lead frame above the fourth circuit pattern.