Semiconductor Lead-Out Electrode Diverts Displacement Current

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Solution Overview

Problem

Conventional semiconductor devices with wide bandgap materials face issues with displacement current concentration at the border between the edge termination region and high-function regions, leading to potential element destruction during voltage surges, due to reduced edge termination width and thickness.

Innovation Solution

The semiconductor device incorporates a lead-out electrode fixed at the source pad's electric potential, positioned between the edge termination region and high-function circuit electrodes, to divert displacement current away from the edge termination region, thereby reducing concentration and potential damage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the edge termination region width and thickness are reduced to improve device integration, then productivity and device density are improved, but displacement current concentration increases leading to element destruction during voltage surges

Engineering Contradiction:
Improvedevice densityVSAvoidsurge capability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A lead-out electrode is introduced as an intermediary component between the edge termination region and the high-function circuit electrodes. This lead-out electrode serves as a mediator to divert displacement current away from the edge termination region border, preventing current concentration and potential element destruction during voltage surges, while allowing the edge termination region to maintain reduced dimensions for improved device density.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The electrode structure is segmented into multiple functional regions: the edge termination region, the high-function circuit electrodes, and the intermediate lead-out electrode. This segmentation allows each region to perform its specific function independently - the lead-out electrode handles displacement current diversion while the edge termination region maintains its voltage blocking function with reduced dimensions, resolving the contradiction between density and surge capability.

Inventive Principle:
Principle #1Segmentation

2Reliability

If a lead-out electrode is added to divert displacement current, then reliability and surge capability are improved, but device complexity increases

Engineering Contradiction:
Improvesurge capabilityVSAvoidelectrode structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The lead-out electrode is designed to perform multiple functions simultaneously: it serves as a current diversion path for displacement current during surges, provides electrical connection between different circuit regions, and maintains proper electric potential distribution. This multi-functionality reduces the need for additional separate components, thereby limiting the increase in device complexity while achieving improved surge capability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS11121248B2Semiconductor device
Publication Date: 2021.09.14 FUJI ELECTRIC CO LTD
  • US11121248B2 patent drawing
  • US11121248B2 patent drawing
  • US11121248B2 patent drawing

AI summary

In an effective region of an active region, a main semiconductor element and a source pad thereof are disposed. A non-operating region of the active region excludes the effective region and is a high-function region in which a gate pad of the main semiconductor element and other electrode pads are disposed. An edge termination region and the electrode pads are separated by an interval equivalent to at least a width of one unit cell of the main semiconductor element. In the high-function region, at a border of the edge termination region, a lead-out electrode is provided on a front surface of a semiconductor substrate. The lead-out electrode has a function of leading out displacement current that flows to the high-function region from the edge termination region when the main semiconductor element is OFF. Thus, destruction at the edge termination region may be suppressed.