Semiconductor Device Isolation for Leakage Measurement
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Solution Overview
Problem
In semiconductor devices with multiple FET structures, leak currents from defects in one FET structure can spread to adjacent structures, compromising the accuracy of measurements for the defective FET.
Innovation Solution
The semiconductor device is designed with separated cell regions and electrodes, where each FET structure has its own distinct p region and electrode, preventing leak currents from flowing between cell regions, allowing for precise measurement of characteristics in each cell region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the drift layer and body region extend continuously throughout multiple FET structures, then the manufacturing process is simplified, but leak current from a defect in one FET structure spreads to adjacent structures, deteriorating measurement accuracy
Solution Approach 1:
The patent divides the continuous drift layer and body region into separate segments for each FET structure by introducing isolation regions. This segmentation prevents leak current from spreading between adjacent FET structures while maintaining the overall continuity of the semiconductor device, thus resolving the contradiction between manufacturing simplicity and measurement accuracy.
Solution Approach 2:
The patent introduces isolation regions as intermediary structures between adjacent FET structures. These isolation regions act as barriers that block the spread of leak current while allowing the drift layer and body region to maintain their functional continuity within each FET structure, thereby improving measurement accuracy without significantly complicating the manufacturing process.
2Measurement precision
If separate p regions are introduced to isolate leak currents between FET structures, then measurement accuracy is improved, but the device structure and manufacturing complexity increase
Solution Approach 1:
The patent implements segmentation by dividing the semiconductor device into distinct cell regions with separate p regions for each FET structure. This segmentation isolates leak currents within each cell region, improving measurement accuracy while keeping the added structural complexity manageable through systematic repetition of the segmented units.
Solution Approach 2:
The patent applies local quality by introducing p regions specifically at the boundaries between cell regions where leak current isolation is needed, while maintaining the original continuous structure within each cell region. This localized modification achieves the desired isolation effect without unnecessarily complicating the entire device structure.
Data Source
AI summary
In a first cell region of a semiconductor substrate, a first semiconductor element is formed. In a second cell region of semiconductor substrate, a second semiconductor element is formed. First semiconductor element includes a first electrode and a first p region. Second semiconductor element includes a second electrode and a second p region. First electrode and second electrode are separated from each other. First p region and second p region are separated from each other.