Semiconductor Device Leakage Current Control via Doping
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Solution Overview
Problem
Semiconductor devices, particularly MOS capacitors, face reliability and efficiency issues when operated at high voltages, leading to increased leakage current and physical damage to the dielectric layer, and reducing voltage to mitigate these issues increases costs and die area.
Innovation Solution
A semiconductor device structure where the capacitor's structure is similar to the transistor, with impurity doping concentrations and depths optimized to reduce leakage current, featuring higher doping concentrations and depths in source and drain regions of the transistor and lower concentrations and depths in the capacitor regions, thereby reducing the electrical field and improving reliability without necessitating reduced operation voltage or increased physical dimensions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the operation voltage of a MOS capacitor is increased, then the power and performance of the semiconductor device is improved, but the leakage current through the dielectric layer increases and reliability degrades
Solution Approach 1:
The patent applies local quality by creating different impurity doping concentrations in different regions of the semiconductor structure. Specifically, the first source and drain regions adjacent to the dielectric layer are doped at a first concentration, while the second source and drain regions are doped at a second concentration that is 5 to 1000 times higher. This localized variation in doping concentration allows the device to operate at high voltages while maintaining reliability by controlling the electrical field distribution at critical interfaces.
Solution Approach 2:
The patent employs parameter changes by varying the impurity doping concentration parameter across different regions. The significant difference (5 to 1000 times) in doping concentration between the first and second source/drain regions modifies the electrical characteristics of the device, enabling it to withstand high operation voltages without excessive leakage current while maintaining acceptable reliability.
2Reliability
If the operation voltage of a MOS capacitor is decreased to reduce leakage current, then the reliability is improved, but the dielectric layer area must be increased which increases cost and die area
Solution Approach 1:
By implementing local quality through region-specific doping, the patent enables the dielectric layer to withstand high electric fields without breakdown. The first source/drain regions with lower doping concentration are positioned adjacent to the dielectric layer, creating a favorable electrical field distribution that prevents excessive leakage current even at high operation voltages. This eliminates the need to increase dielectric layer area to maintain reliability.
3Reliability
If the impurity doping concentration in source and drain regions is increased, then the electrical field is reduced and leakage current decreases, but the manufacturing complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the source and drain regions into two distinct segments: first source/drain regions with a first impurity doping concentration and second source/drain regions with a second impurity doping concentration that is 5 to 1000 times higher. This segmentation allows precise control of the electrical field distribution, reducing leakage current through the dielectric layer while managing manufacturing complexity through a systematic doping approach.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach decreases leakage current through the dielectric layer, enhancing the reliability of the semiconductor device while maintaining capacitance and avoiding the need to decrease operation voltage or increase capacitor size.
Implementation Method 1
an impurity doping concentration of the first source region and the first drain region is greater than an impurity doping concentration of the second source region and the second drain region
Data Source
AI summary
A semiconductor device having a semiconductor substrate including a first region and a second region is provided. The semiconductor device further includes a gate electrode on the first region and having a first sidewall and a second sidewall, a first source region in the first region proximate to the first sidewall, a first drain region in the first region proximate to the second sidewall, an upper electrode on the second region and having a first sidewall and a second sidewall, a second source region in the second region proximate to the first sidewall of the upper electrode, and a second drain region in the second region proximate to the second sidewall of the upper electrode, wherein an impurity doping concentration of the first source region and the first drain region is greater than an impurity doping concentration of the second source region and the second drain region.