Semiconductor Device Leakage Current Suppression via Segmented Gate
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Solution Overview
Problem
Current semiconductor devices face challenges in suppressing leakage current and maintaining crystallinity, particularly in the peripheral regions where the two-dimensional electron gas is not generated due to degradation caused by introduced elements.
Innovation Solution
The semiconductor device incorporates a semiconductor member with Alx1Ga1-x1N and Alx2Ga1-x2N layers, a gate electrode structure with specific portions, and an insulating region to control the flow of current and suppress leakage, while introducing a heavy element like Ar, P, or B in the peripheral region to degrade crystallinity and prevent two-dimensional electron gas formation, thereby isolating the active region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If elements are introduced in the peripheral region to suppress two-dimensional electron gas formation, then leakage current is suppressed, but crystallinity is degraded
Solution Approach 1:
The patent applies local quality by introducing elements (such as Si, Ge, or C) selectively in the peripheral region of the semiconductor device where two-dimensional electron gas should not form, while maintaining high crystallinity in the active region. This creates different material properties in different spatial locations: the peripheral region has degraded crystallinity to suppress leakage current, while the active region maintains excellent crystallinity for optimal device performance.
2Reliability
If the gate electrode extends over the source electrode, then leakage current path is blocked, but device structure becomes more complex
Solution Approach 1:
The gate electrode is segmented into multiple portions (first gate electrode portion, second gate electrode portion, third gate electrode portion) that are positioned at different locations relative to the source and drain electrodes. This segmentation allows the gate electrode to effectively block leakage current paths while maintaining a manageable structural complexity through systematic arrangement of the segments.
Solution Approach 2:
The gate electrode structure utilizes three-dimensional positioning with portions extending in different directions and overlapping with source and drain electrodes in planar views. This dimensional arrangement creates effective leakage current blocking without requiring excessive horizontal space, resolving the contradiction between leakage suppression and structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses leakage current and stabilizes the operation of the semiconductor device by maintaining a two-dimensional electron gas only in the active region, enhancing the device's characteristics and reliability.
Implementation Method 1
introducing a heavy element like Ar, P, or B in the peripheral region to degrade crystallinity and prevent two-dimensional electron gas formation
Implementation Method 2
The first semiconductor layer includes Alx1Ga1-x1N (0≤x1<0.5) and the second semiconductor layer includes Alx2Ga1-x2N (0≤x2<0.5), maintaining a two-dimensional electron gas
Data Source
AI summary
According to one embodiment, a semiconductor device includes a semiconductor member, a first source electrode, a first gate electrode, a first drain electrode, a source pad part, a first source connection part, and an insulating part. The semiconductor member includes first and second semiconductor layers. The first gate electrode includes first to fourth portions. The first source electrode is between the first and second portions in a first direction, and is between the third and fourth portions in a second. The first drain electrode extends along the first direction. The first source electrode is between the third portion and the first drain electrode in the second direction. The first source connection part electrically connects the first source electrode and the source pad part. A portion of the first insulating region of the insulating part is between the first portion and the first source connection part.