Semiconductor Light Emitting Device Adhesive Force

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Solution Overview

Problem

The existing semiconductor light emitting devices face challenges in enhancing the adhesive force between the semiconductor layers, which affects the reliability and efficiency of the device.

Innovation Solution

A semiconductor light emitting device is designed with a roughness pattern on the outer surface of the second conductive semiconductor layer, featuring a channel layer with protrusions along the peripheral portion, which increases the contact area and prevents delamination, thereby enhancing the adhesive force.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If a flat surface is used between semiconductor layers, then the manufacturing process is simple, but the adhesive force between layers is insufficient

Engineering Contradiction:
Improveadhesive forceVSAvoidsurface structure complexity
Core Design Contradiction:
StrengthVSDevice complexity

Solution Approach 1:

The patent applies surface curvature by forming protrusions and recesses on the semiconductor layer surface. The protrusions extend upward from the surface while recesses extend downward, creating a curved, three-dimensional surface topology that increases contact area and mechanical interlocking between layers, thereby enhancing adhesive force without requiring complex manufacturing processes.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Strength

If the contact area between layers is increased, then the adhesive force is enhanced, but the manufacturing precision requirements increase

Engineering Contradiction:
Improveadhesive forceVSAvoidsurface pattern precision
Core Design Contradiction:
StrengthVSManufacturing precision

Solution Approach 1:

The patent segments the surface into multiple discrete protrusions and recesses rather than using a continuous complex pattern. This segmentation allows each feature to be formed independently with standard photolithography and etching processes, reducing the overall manufacturing precision requirements while still achieving significant contact area increase and adhesive force enhancement.

Inventive Principle:
Principle #1Segmentation

3Reliability

If the semiconductor layers are made more stable against delamination, then the device reliability improves, but the structural complexity increases

Engineering Contradiction:
Improvedevice reliabilityVSAvoidlayer structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent uses surface curvature through protrusions and recesses to create mechanical interlocking between layers. This physical interlocking mechanism significantly improves resistance to delamination and enhances device reliability, while the pattern itself remains relatively simple to manufacture, thus not substantially increasing structural complexity.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Data Source

PatentUS9029906B2Semiconductor light emitting device
Publication Date: 2015.05.12 BOE HC SEMITEK LTD (HENGQIN)
  • US9029906B2 patent drawing
  • US9029906B2 patent drawing
  • US9029906B2 patent drawing

AI summary

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a conductive support member disposed under the second conductive semiconductor layer, an insulating layer disposed between the second conductive semiconductor layer and the conductive support member, and a stepped conductive layer disposed between the second conductive semiconductor layer and the conductive support member. The stepped conductive layer includes a lower parts and an upper parts. The upper parts are directly contacted with the second conductive semiconductor layer. The lower parts are disposed between the insulating layer and the conductive support member. The insulating layer is laterally disposed between the plurality of upper parts.