Semiconductor Light Emitting Device Reflective Electrode Air Gaps
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Solution Overview
Problem
Semiconductor light emitting devices face challenges in enhancing light extraction efficiency and reflectivity due to limitations in current reflective electrode structures, which affect their overall performance.
Innovation Solution
The semiconductor light emitting device incorporates a reflective electrode structure with a light-transmitting insulating layer and air gaps between the transparent electrode layer and the insulating patterns, forming an omnidirectional reflector (ODR) that increases total internal reflection and reflectivity by reducing the critical angle and improving light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional reflective electrode structure is used, then the device structure is simple, but the light extraction efficiency and reflectivity are insufficient
Solution Approach 1:
The reflective electrode structure uses a composite configuration combining transparent electrode layer, light-transmitting insulating layer, and reflective electrode layer to achieve both high light extraction efficiency and omnidirectional reflectivity while maintaining manufacturing feasibility through sequential layer deposition
Solution Approach 2:
The light-transmitting insulating layer is positioned specifically between the transparent electrode layer and reflective electrode layer to create air gaps that enhance light extraction in critical regions, while the reflective electrode layer provides omnidirectional reflection from the bottom, creating localized functional zones with optimized properties
2Productivity
If the reflective electrode structure is optimized for higher reflectivity, then the light extraction efficiency improves, but the device structure becomes more complex
Solution Approach 1:
The reflective electrode structure is segmented into three distinct functional layers: transparent electrode layer for light transmission, light-transmitting insulating layer for creating air gaps and electrical isolation, and reflective electrode layer for omnidirectional reflection. This segmentation allows each layer to be optimized independently while working together to achieve high light extraction efficiency
Solution Approach 2:
The light-transmitting insulating layer acts as an intermediary between the transparent electrode layer and reflective electrode layer, creating air gaps that enhance light extraction efficiency while maintaining electrical isolation and mechanical stability, thus simplifying the overall structure compared to direct contact configurations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly enhances reflectivity and light extraction efficiency, leading to improved performance and efficiency in semiconductor light emitting devices.
Implementation Method 1
forming an omnidirectional reflector (ODR) that increases total internal reflection and reflectivity by reducing the critical angle
Implementation Method 2
a reflective electrode layer on the plurality of insulating patterns to cover the open portions of the sides of the plurality of insulating patterns, the reflective electrode layer being connected to the contact region of the transparent electrode layer
Data Source
AI summary
A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer, and a reflective electrode structure on the transparent electrode layer that includes a light-transmitting insulating layer on the transparent electrode layer with insulating patterns, portions of sides of the insulating patterns being open, and a contact region of the transparent electrode layer being defined by a region between the insulating patterns, air gaps between the transparent electrode layer and the insulating patterns, the air gaps extending in the open portions of the sides of the insulating patterns, and a reflective electrode layer on the insulating patterns to cover the open portions of the insulating patterns, the reflective electrode layer being connected to the contact region of the transparent electrode layer.