Semiconductor Light-Emitting Device Collective Transfer
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Solution Overview
Problem
The existing methods for manufacturing nitride-based LEDs are inefficient due to the need to mount and remove sapphire substrates from each LED chip individually, which complicates the process and reduces productivity.
Innovation Solution
A method involving the formation of semiconductor layers on a temporary substrate, followed by the creation of interconnect layers and trenches to divide the layers into chips, which are then bonded to a supporting substrate using laser separation, allowing for collective transfer and mounting of chips without the need for individual handling of each chip.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If individual chip mounting and sapphire substrate removal are performed for each LED chip, then light extraction efficiency can be improved, but manufacturing efficiency deteriorates due to the complex and time-consuming process
Solution Approach 1:
Multiple LED chips are mounted simultaneously on a single supporting substrate in a grid arrangement, and the sapphire substrate removal is performed collectively for all chips at once using laser irradiation, rather than processing each chip individually. This merging of operations dramatically improves manufacturing efficiency while maintaining light extraction efficiency.
Solution Approach 2:
The supporting substrate is prepared in advance with a grid pattern of mounting positions, and multiple chips are positioned and bonded to the supporting substrate before the sapphire substrate removal process. This preliminary arrangement enables efficient batch processing and eliminates the need for individual chip handling during the removal stage.
2Manufacturing precision
If multiple chips are processed individually, then each chip can be handled precisely, but the overall process complexity increases and productivity decreases
Solution Approach 1:
The supporting substrate is divided into a grid pattern with multiple predetermined mounting positions, and chips are positioned at these segmented locations. This segmentation provides precise positioning for each chip while enabling batch processing, as each grid position can be independently addressed during laser irradiation for sapphire substrate removal.
Solution Approach 2:
The supporting substrate acts as an intermediary carrier that holds multiple chips in precise grid positions during the manufacturing process. It enables simultaneous handling of multiple chips with precise positioning while simplifying the overall process by allowing batch operations, particularly the collective laser removal of sapphire substrates from all chips at once.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the efficiency of the LED manufacturing process by enabling the collective transfer and mounting of multiple chips, improving light extraction efficiency and reducing the complexity of handling individual chips, thus increasing productivity and reliability.
Implementation Method 1
irradiating interfaces between the first major surfaces of the chips to be bonded to the second interconnect layer and the temporary substrate with laser light to separate the chips to be bonded and the temporary substrate
Data Source
AI summary
A method for manufacturing a semiconductor light-emitting device of the invention includes: forming a semiconductor layer including a light-emitting layer and a first interconnect layer on a major surface of a temporary substrate; dividing the semiconductor layer and the first interconnect layer into a plurality of chips by a trench; collectively bonding each divided portion of the first interconnect layer of a plurality of chips to be bonded not adjacent to each other out of the plurality of chips on the temporary substrate to a second interconnect layer while opposing the major surface of the temporary substrate and the major surface of a supporting substrate forming the second interconnect layer, and collectively transferring a plurality of the bonded chips from the temporary substrate to the supporting substrate after irradiating interfaces between the bonded chips and the temporary substrate and separating the chips and the temporary substrate from each other.