Semiconductor Light Emitting Device Reflective Electrode Adhesion
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Solution Overview
Problem
Current semiconductor light emitting devices face challenges in enhancing light extraction efficiency and reliability, particularly due to limitations in reflective electrode layer adhesion and metal migration, which affect their luminous flux and overall performance.
Innovation Solution
The semiconductor light emitting device incorporates a reflective electrode layer with a transparent protection layer covering its upper and side surfaces, and a first insulating layer with through-holes to improve adhesion and reduce metal migration, along with a p-type omnidirectional reflector configuration that includes a thin transparent conductive oxide adhesion layer between the reflective metal and dielectric material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a reflective electrode layer is used to improve light extraction efficiency, then reflectance increases, but metal peeling and migration occur reducing reliability
Solution Approach 1:
An adhesion layer is introduced as an intermediary between the reflective electrode layer and the underlying structure. This adhesion layer prevents metal peeling and migration while maintaining the high reflectance of the reflective electrode layer, thus resolving the contradiction between light extraction efficiency and reliability.
Solution Approach 2:
The electrode structure is designed as a composite material system comprising multiple layers including the reflective electrode layer and the adhesion layer. This composite structure combines the high reflectance property of the reflective layer with the adhesion properties of the adhesion layer, simultaneously achieving improved light extraction and enhanced reliability.
2Ease of manufacture
If the reflective electrode layer structure is simplified, then manufacturing complexity reduces, but adhesion and metal migration control worsen
Solution Approach 1:
The electrode structure is segmented into distinct functional layers: a reflective electrode layer for light extraction and an adhesion layer for reliability. This segmentation allows each layer to be optimized for its specific function while maintaining overall manufacturing simplicity, as the layers can be deposited using standard sequential deposition processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light extraction efficiency, increases reflectance, and improves the reliability of the semiconductor light emitting device by suppressing metal peeling and migration, resulting in improved luminous flux and reliability.
Implementation Method 1
a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes
Implementation Method 2
a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer
Data Source
AI summary
A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.