Semiconductor Light Emitting Device ESD Immunity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor light emitting devices face challenges with electrostatic discharging (ESD) immunity due to dislocations in the un-doped semiconductor layer, which can lead to device failure upon ESD exposure, affecting reliability and light intensity.
Innovation Solution
Incorporating a plurality of diffusion semiconductor structures in a three-dimensional shape within the un-doped semiconductor layer under the light emitting structure, enhancing current diffusion and ESD immunity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If diffusion structures are added to the un-doped semiconductor layer, then ESD immunity is improved, but device complexity increases
Solution Approach 1:
The un-doped semiconductor layer is segmented into multiple regions by introducing a plurality of diffusion structures. These structures divide the layer into distinct zones with different electrical properties, creating current blocking regions that enhance ESD immunity while maintaining overall structural organization.
Solution Approach 2:
Diffusion structures are strategically positioned within the un-doped semiconductor layer to create localized regions with modified electrical characteristics. These local modifications provide targeted ESD protection without requiring changes to the entire device structure, thus improving reliability with minimal complexity increase.
2Productivity
If diffusion structures are introduced in the un-doped semiconductor layer, then current diffusion is improved, but manufacturing complexity increases
Solution Approach 1:
The patent introduces diffusion structures with three-dimensional configurations (such as pillars, cones, or inverted pyramids) within the un-doped semiconductor layer. This dimensional approach creates multiple current diffusion pathways and increases the effective surface area for current distribution, significantly improving current diffusion efficiency while the regular geometric patterns facilitate standardized manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides reinforced ESD immunity and improved reliability without deteriorating voltage or light intensity, enabling efficient three-dimensional current diffusion and enhanced electrical and optical performance.
Implementation Method 1
induce three-dimensional current diffusion by disposing diffusion structures in a three-dimensional shape under a light emitting structure
Implementation Method 2
reinforced ESD (electrostatic discharging) immunity by disposing a plurality of diffusion semiconductor structures in an un-doped semiconductor layer
Data Source
AI summary
The semiconductor light emitting device according to embodiments has a first conductive type semiconductor layer, an un-doped semiconductor layer under the first conductive type semiconductor layer, and a plurality of semiconductor structures in the un-doped semiconductor layer.