Semiconductor Light Emitting Device Plasma Treatment
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Solution Overview
Problem
The manufacturing of semiconductor light emitting devices is hindered by high costs and long production times, necessitating a method to reduce these factors for mass production.
Innovation Solution
A method involving the stacking of a light emitting structure with conductivity type semiconductor layers, forming electrodes, and performing plasma treatments on insulating layers to create oxygen-depleted layers and unevenness, which improves adhesion and reduces forward voltage, allowing for efficient electrode pad formation without additional adhesive layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional manufacturing processes are used for semiconductor light emitting devices, then manufacturing quality is maintained, but manufacturing costs are high and production time is long
Solution Approach 1:
The patent combines the plasma treatment process that forms oxygen-depleted layers with the process that creates surface unevenness on the insulating layer into a single integrated step. This merging of functions reduces the total number of manufacturing steps, decreases production time, and lowers manufacturing costs while maintaining device quality and performance
2Strength
If additional adhesive layers are added to improve electrode adhesion, then adhesion strength is improved, but device complexity and manufacturing steps increase
Solution Approach 1:
The patent extracts and eliminates the need for separate adhesive layers by creating an oxygen-depleted layer directly on the electrode surfaces through plasma treatment. This native functional layer provides the necessary adhesion properties without requiring additional foreign material layers, thereby reducing device complexity while maintaining or improving adhesion strength
Solution Approach 2:
The electrode surfaces treat themselves by forming oxygen-depleted layers through plasma exposure, creating their own adhesion-promoting interface. This self-service mechanism eliminates the need for external adhesive materials and simplifies the overall device structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach decreases manufacturing costs and time by enhancing adhesion and luminance while lowering driving voltage, thus facilitating mass production of semiconductor light emitting devices.
Implementation Method 1
performing a plasma treatment on a surface of the insulating layer and the partially exposed surfaces of the first and second electrodes to form an unevenness portion on the surface of the insulating layer and form an oxygen-depleted layer on the partially exposed surfaces of the first and second electrodes
Implementation Method 2
performing a plasma treatment on a surface of the insulating layer and the partially exposed surfaces of the first and second electrodes to form an unevenness portion on the surface of the insulating layer
Data Source
AI summary
A method of manufacturing a semiconductor light emitting device includes stacking a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate; forming a first electrode and a second electrode on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively; forming an insulating layer covering the first and second electrodes and having first and second openings partially exposing surfaces of the first and second electrodes, respectively; and performing a plasma treatment on a surface of the insulating layer and the partially exposed surfaces of the first and second electrodes to form an unevenness portion on the surface of the insulating layer and form an oxygen-depleted layer on the partially exposed surfaces of the first and second electrodes.