Semiconductor Package Lid Protrusion for Delamination and Warpage
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Solution Overview
Problem
The semiconductor industry faces challenges in scaling down IC fabrication due to increased complexity and the need for advanced packaging solutions that address thermal management and mechanical stress issues in semiconductor packages, which can lead to delamination and warpage.
Innovation Solution
The use of a combination of metallic and polymeric thermal interface materials (TIM) layers, along with a specific configuration of the polymeric TIM layer on the corners of the semiconductor die, and a protruding portion on the lid to reduce mechanical strain and stress, enhancing thermal conductivity and preventing delamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If scaling down IC fabrication is pursued to increase production efficiency and lower costs, then productivity improves, but device complexity increases making manufacturing more difficult
Solution Approach 1:
The patent segments the packaging process into distinct stages: die attachment, wire bonding, and encapsulation. This segmentation allows each stage to be optimized independently, managing complexity while maintaining high productivity through standardized procedures for each segment.
Solution Approach 2:
The patent employs parameter changes in the form of different underfill materials and curing conditions to manage manufacturing complexity. By adjusting material properties and processing parameters, the patent achieves reliable packaging results across different device scales without requiring fundamentally different manufacturing approaches.
2Temperature
If advanced packaging solutions are implemented to address thermal management, then thermal performance improves, but mechanical stress increases leading to delamination and warpage
Solution Approach 1:
The patent applies local quality by placing underfill material specifically at the corners and edges of the semiconductor die rather than uniformly across the entire die. This localized application provides stress relief exactly where mechanical stresses concentrate during thermal cycling, preventing delamination while maintaining thermal performance through the TIM layers.
Solution Approach 2:
The patent uses composite materials combining metallic thermal interface material (TIM) layers with polymeric underfill materials. This composite structure provides both excellent thermal conductivity from the metallic TIM and mechanical stress relief from the polymeric underfill, simultaneously addressing thermal management and stress reduction requirements.
3Temperature
If metallic and polymeric TIM layers are used to enhance thermal conductivity, then thermal performance improves, but manufacturing complexity increases
Solution Approach 1:
The patent merges the functions of thermal conduction and stress relief into a single integrated underfill structure. The polymeric underfill material simultaneously provides mechanical compliance for stress relief and serves as a substrate for metallic TIM layers that provide thermal conduction, eliminating the need for separate components and reducing manufacturing complexity.
Solution Approach 2:
The patent applies preliminary action by pre-forming the underfill material with corner and edge extensions before die attachment. This preliminary configuration ensures proper stress distribution and thermal contact from the outset, eliminating the need for complex post-assembly adjustments or additional processing steps to achieve optimal thermal performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces mechanical strain and stress, preventing delamination and enhancing the thermal performance of the semiconductor package, while maintaining thermal conductivity and improving the overall performance of the semiconductor package.
Implementation Method 1
The adhesive layer includes a metallic thermal interface material (TIM) layer and a polymeric TIM layer
Implementation Method 2
The polymeric TIM layer is located on corners of the semiconductor die and the protruding portion is attached to the semiconductor die
Data Source
AI summary
A semiconductor package includes a substrate, a semiconductor die, a lid, and an adhesive layer. The semiconductor die is attached to the substrate. The lid is over the semiconductor die and the substrate. The adhesive layer is sandwiched between the lid and the semiconductor die. The adhesive layer includes a metallic thermal interface material (TIM) layer and a polymeric TIM layer adjacent to the metallic TIM layer. The polymeric TIM layer is located on corners of the semiconductor die from a top view.