Semiconductor Package Lid Structure With Phase-Change Thermal Interface
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Solution Overview
Problem
The semiconductor industry faces challenges in scaling down IC fabrication processes, leading to increased complexity and costs, while maintaining performance and efficiency, due to the need for advanced manufacturing techniques and materials in semiconductor die and package structure development.
Innovation Solution
The development of a manufacturing process involving the formation of interconnection structures, dielectric layers, conductive layers, and conductive terminals on semiconductor wafers, followed by packaging and assembly techniques such as flip-chip bonding and reflow processes, to create efficient semiconductor devices with improved thermal dissipation and anti-stress mechanisms using phase change thermal interface materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor device feature size is scaled down to increase functional density, then production efficiency and performance are improved, but processing complexity and manufacturing costs increase
Solution Approach 1:
The patent segments the semiconductor device into multiple functional layers including interconnection structures, dielectric layers, conductive layers, and conductive terminals. Each layer is formed through separate processing steps, allowing independent optimization and control of each segment, which manages the complexity inherent in scaled-down devices while maintaining high functional density
Solution Approach 2:
The patent transitions from planar 2D interconnection to 3D vertical stacking by forming conductive layers and dielectric layers in multiple tiers. This dimensional transition increases functional density without further reducing feature size, thereby improving productivity while managing processing complexity through vertical integration rather than horizontal scaling
2Reliability
If advanced manufacturing techniques and materials are used to maintain performance during scaling, then device performance is preserved, but manufacturing complexity and costs increase
Solution Approach 1:
The patent employs parameter changes by forming dielectric layers with different material compositions and physical properties at different vertical positions. The dielectric constant, thickness, and material composition are varied across layers to optimize electrical performance and thermal management, preserving device performance while using standardized processing techniques that manage manufacturing complexity
Solution Approach 2:
The patent uses composite material structures combining conductive layers, dielectric layers, and interconnection structures with different functional properties. These composite structures maintain device performance through material optimization while being formed through sequential deposition processes that manage manufacturing complexity
3Temperature
If complex packaging structures are integrated to improve thermal dissipation, then thermal management is enhanced, but manufacturing complexity increases
Solution Approach 1:
The patent merges thermal management functions with the electrical interconnection structure by integrating heat dissipation pathways through the same vertical stack that contains conductive and dielectric layers. This consolidation enhances thermal dissipation without adding separate packaging components, thereby managing the complexity of the overall structure
Solution Approach 2:
The dielectric layers and conductive structures serve multiple functions simultaneously: electrical insulation, signal transmission, and thermal conduction. This multi-functionality enhances thermal dissipation through the existing packaging structure without requiring additional complex thermal management components
4Reliability
If anti-stress mechanisms are implemented to reduce warpage and delamination, then device reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by varying the dielectric material properties and layer thickness at different locations within the vertical stack. Stress-compensating layers are strategically positioned based on local stress requirements, providing targeted anti-stress mechanisms that reduce warpage and delamination while maintaining simplicity in the overall manufacturing process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the thermal dissipation rate and reliability of semiconductor devices, reduces stress-related issues like warpage and delamination, and improves manufacturing efficiency by integrating advanced materials and processes for complex packaging structures.
Implementation Method 1
The first adhesive layer includes phase change thermal interface material (PCTIM)
Data Source
AI summary
A semiconductor device includes a substrate, a first device, a second device, a ring structure, a lid structure, and a first adhesive layer. The first device is disposed on the substrate. The second device is adjacent to the first device and is disposed on the substrate. The ring structure is disposed over the substrate and the second device. The ring structure includes a cover and a leg extending out from the cover. The cover has a through opening. The lid structure is disposed over the ring structure and the first device. The lid structure includes a body and a protrusion protruding from the body. The protrusion of the lid structure is inserted into the through opening of the cover of the ring structure. The first adhesive layer is disposed between the body of the lid structure and the cover of the ring structure and includes phase change thermal interface material.