Semiconductor Life Prediction via Bonding Pad Monitoring

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Solution Overview

Problem

Existing life prediction methods for semiconductor devices are uneconomical due to the need for premature shutdowns to account for variations among individual devices and unquantified failure conditions, leading to unnecessary downtime.

Innovation Solution

A life prediction method involving a life prediction wire connected to a semiconductor device's wire bonding pad, where an electric current is passed to detect whether it flows to ground, allowing direct assessment of the device's deterioration state, thereby anticipating failure occurrence.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If statistical life prediction methods are used with integrated operating time values, then failure prediction can be made, but the semiconductor device must be stopped prematurely to account for variations among individual devices and unquantified failure conditions

Engineering Contradiction:
Improvefailure prediction accuracyVSAvoiddevice uptime
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

A life prediction wire is connected to the wire bonding pad during manufacturing, establishing a monitoring pathway in advance. This allows continuous detection of wire bonding pad deterioration during operation, enabling the device to run until actual deterioration occurs rather than being stopped prematurely based on statistical estimates.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The life prediction circuit continuously monitors the electrical connection between the life prediction wire and wire bonding pad, providing real-time feedback on deterioration state. This feedback mechanism replaces static statistical prediction with dynamic actual condition monitoring, allowing the device to operate until genuine failure thresholds are reached.

Inventive Principle:
Principle #23Feedback

2Reliability

If statistical life prediction methods are used, then failure occurrence can be estimated, but unnecessary shutdowns occur due to non-quantified deterioration conditions

Engineering Contradiction:
Improvefailure detection capabilityVSAvoidunnecessary downtime
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent replaces statistical estimation methods with direct electrical measurement. By using a life prediction wire and detection circuit to monitor electrical continuity, the system substitutes quantitative real-time data for qualitative statistical predictions, eliminating unnecessary shutdowns caused by uncertain estimates.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The life prediction wire acts as an intermediary element that directly samples the condition of the wire bonding pad without affecting normal device operation. This intermediary provides a dedicated monitoring pathway that enables continuous assessment of deterioration while the device remains in service.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables early detection of semiconductor device failure by accurately monitoring the deterioration state, reducing unnecessary shutdowns and extending device lifespan.

Implementation Method 1

detecting whether or not an electric current flows from the life prediction wire to the wire bonding pad

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS8004304B2Semiconductor device, and life prediction circuit and life prediction method for semiconductor device
Publication Date: 2011.08.23 MITSUBISHI ELECTRIC CORP
  • US8004304B2 patent drawing
  • US8004304B2 patent drawing
  • US8004304B2 patent drawing

AI summary

A life prediction wire 14 is connected to an emitter-wire bonding pad 2 of a semiconductor device 1. Wire deterioration is detected by checking whether or not an electric current flows from the life prediction wire 14 to the emitter-wire bonding pad 2. Thus, by directly checking a deterioration state of the semiconductor device, the life of the semiconductor device is predicted.