Semiconductor Lifetime Adjustment Layout for Reverse Recovery Control
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Solution Overview
Problem
Current semiconductor devices face challenges in optimizing carrier lifetime and reverse recovery characteristics due to limitations in adjusting the lifetime of charge carriers, which affects the performance of diode and transistor portions.
Innovation Solution
The implementation of a first lifetime adjustment region with helium ions implanted into the semiconductor substrate to create lattice defects, specifically vacancies, which act as recombination centers, allowing for localized adjustment of carrier lifetime and improved reverse recovery characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If charged particles are implanted into the semiconductor substrate to form a lifetime adjustment region, then carrier lifetime can be adjusted, but the ability to locally optimize both reverse recovery characteristics and leakage current remains limited
Solution Approach 1:
The patent applies local quality by creating distinct lifetime adjustment regions with different carrier lifetime characteristics in different areas of the semiconductor device. A first lifetime adjustment region with shorter carrier lifetime is formed near the diode portion to reduce reverse recovery time, while a second lifetime adjustment region with longer carrier lifetime is formed near the transistor portion to maintain low leakage current. This spatial differentiation of lifetime characteristics allows simultaneous optimization of both reverse recovery characteristics and leakage current control in their respective regions.
2Loss of time
If carrier lifetime is reduced to improve reverse recovery time, then reverse recovery characteristics are enhanced, but leakage current increases
Solution Approach 1:
The patent implements local quality by establishing different carrier lifetime characteristics in different spatial regions. The first lifetime adjustment region near the diode portion has reduced carrier lifetime to minimize reverse recovery time, while the second lifetime adjustment region near the transistor portion maintains longer carrier lifetime to suppress leakage current. This localized differentiation resolves the contradiction by allowing short lifetime where fast switching is needed and long lifetime where low leakage is critical.
Solution Approach 2:
The patent applies segmentation by dividing the lifetime adjustment function into separate regions: a first lifetime adjustment region for optimizing diode reverse recovery characteristics and a second lifetime adjustment region for controlling transistor leakage current. Each segmented region is independently optimized for its specific function, allowing the device to achieve both fast reverse recovery and low leakage current without compromise.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the carrier lifetime in specific regions, enhancing the reverse recovery time and loss of diode portions while minimizing leakage current, thereby improving the overall performance of semiconductor devices.
Implementation Method 1
a first lifetime adjustment region 201 including lattice defects 210 is provided in a semiconductor substrate 10. The lattice defects 210 are formed in vicinity of an implantation position of charged particles
Data Source
AI summary
Provided is a semiconductor device which has a first lifetime adjustment region which is provided at a first depth on an upper surface side of a semiconductor substrate and has a density of lattice defects that is a first defect density, and in which the first lifetime adjustment region includes a region which is arranged below a contact region, which is closest to a diode portion in a first direction, among contact regions, and a first length in the first direction by which the first lifetime adjustment region in the diode portion is provided is 0, or is smaller than a second length in the first direction by which the first lifetime adjustment region is not provided in the diode portion.