Light-absorbing Material Placement in Semiconductor Devices

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Solution Overview

Problem

Radiation-emitting semiconductor devices face issues with light reflection and absorption, particularly in connection regions and wire connections, which affect the appearance and functionality, especially in display applications where high contrast and uniform color are desired.

Innovation Solution

The use of a light-absorbing material is applied selectively to the chip connection and wire connection regions, while keeping the radiation-emitting semiconductor chip free of the material, and ensuring the chip mounting area matches the color of the light-absorbing material to minimize reflections and enhance contrast.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If the chip connection region and wire connection regions are covered with light-absorbing material, then the appearance uniformity and contrast are improved, but the manufacturing complexity increases due to selective application requirements

Engineering Contradiction:
Improveappearance uniformityVSAvoidmanufacturing complexity
Core Design Contradiction:
Illumination intensityVSDevice complexity

Solution Approach 1:

The patent applies light-absorbing material selectively to specific regions (chip connection region and wire connection regions) rather than uniformly across the entire substrate. This local quality approach ensures that metallizations are hidden where they would be visible, while avoiding unnecessary material application in other areas, thus improving appearance uniformity without excessive manufacturing complexity

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent extracts the light-absorbing material application to only those specific locations where metallizations need to be concealed. By removing the material application from unnecessary areas and concentrating it only where needed for aesthetic purposes, the manufacturing process becomes more manageable while achieving the desired visual uniformity

Inventive Principle:
Principle #2Taking out (Extraction)

2Loss of energy

If the radiation-emitting semiconductor chip is kept free of light-absorbing material, then the light emission efficiency is improved, but the visibility of underlying metallizations increases

Engineering Contradiction:
Improvelight emission efficiencyVSAvoidmetallization visibility
Core Design Contradiction:
Loss of energyVSObject-generated harmful factors

Solution Approach 1:

The patent implements local quality by applying light-absorbing material only to the chip connection region and wire connection regions, while deliberately leaving the radiation-emitting semiconductor chip area free of such material. This ensures that the chip maintains optimal light emission efficiency without unnecessary material coverage, while the connection regions achieve aesthetic uniformity by concealing metallizations

Inventive Principle:
Principle #3Local quality

3Illumination intensity

If the chip mounting area is made to match the color of the light-absorbing material, then the appearance uniformity is improved, but the manufacturing precision requirements increase

Engineering Contradiction:
Improveappearance uniformityVSAvoidcolor matching precision
Core Design Contradiction:
Illumination intensityVSManufacturing precision

Solution Approach 1:

The patent utilizes parameter changes by matching the color parameter of the chip mounting area to the color parameter of the light-absorbing material. This color parameter alignment creates visual uniformity across the device surface, making the transitions between different regions less noticeable and improving overall appearance consistency

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in a semiconductor device that appears fully black in the switched-off state with high brightness in the switched-on state, suitable for large-area video walls and display applications, maintaining uniform color and reducing the visibility of metallizations.

Implementation Method 1

the chip connection region is covered with a light-absorbing material at locations at which the chip connection region is not covered by the radiation-emitting semiconductor chip

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Data Source

PatentUS10312416B2Radiation-emitting semiconductor device
Publication Date: 2019.06.04 OSRAM OLED
  • US10312416B2 patent drawing
  • US10312416B2 patent drawing
  • US10312416B2 patent drawing

AI summary

A radiation-emitting semiconductor device includes a housing body having a chip mounting area, a chip connection region, a radiation-emitting semiconductor chip, and a light-absorbing material, wherein the radiation-emitting semiconductor chip is fixed to the chip connection region, the chip connection region is covered with the light-absorbing material at selected locations at which the chip connection region is not covered by the radiation-emitting semiconductor chip, the radiation-emitting semiconductor chip is free of the light-absorbing material in selected locations, the housing body has a cavity in which the at least one radiation-emitting semiconductor chip is arranged, the chip mounting area is a surface of the housing body which abuts the cavity, and the chip mounting area is free of the light-absorbing material in selected locations remote from the chip connection region.