Semiconductor Light Device Contact Layer Vacancy Control

Solution Overview

Problem

Conventional IFVD techniques struggle to maintain low disordering in non-window portions while achieving high disordering in window portions of semiconductor laser elements, leading to difficulties in preventing COD and maintaining laser characteristics.

Innovation Solution

A semiconductor light device and manufacturing method involving a semiconductor substrate with a first conduction type, a first cladding layer, an active layer with a window portion disordered via vacancy diffusion, and a contact layer with distinct regions for vacancy generation and diffusion, using dielectric films of different densities to control disordering levels and hydrogen affinity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If conventional IFVD technique is used to increase disordering in window portion, then laser light absorption is reduced and COD is prevented, but disordering in non-window portion increases and laser characteristics deteriorate

Engineering Contradiction:

Improvelaser light absorption and CODVSAvoidlaser characteristics

Core Design Contradiction:

Object-affected harmful factorsVSReliability

Solution Approach 1:

The contact layer is divided into two regions with different hydrogen affinities: a first region with high hydrogen affinity that encourages vacancy diffusion to the window portion, and a second region with low hydrogen affinity that limits vacancy diffusion to the non-window portion. This local differentiation allows high disordering in the window portion for COD prevention while maintaining low disordering in the non-window portion for laser characteristic preservation.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The contact layer acts as an intermediary between the active layer and external environment, using its dual-region structure to mediate vacancy diffusion. The first region promotes vacancy generation and diffusion toward the window portion, while the second region restricts vacancy diffusion to non-window areas, thereby controlling the spatial distribution of disordering in the active layer.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Object-affected harmful factors

If high degree of disordering is achieved in window portion, then bandgap energy increases and light absorption decreases, but it becomes difficult to maintain low disordering in non-window portion

Engineering Contradiction:

Improvelight absorption in window portionVSAvoidcontrol of disordering degree

Core Design Contradiction:

Object-affected harmful factorsVSManufacturing precision

Solution Approach 1:

The contact layer is divided into two regions with different hydrogen affinities: a first region with high hydrogen affinity that encourages vacancy diffusion to the window portion, and a second region with low hydrogen affinity that limits vacancy diffusion to the non-window portion. This local differentiation allows high disordering in the window portion for COD prevention while maintaining low disordering in the non-window portion for laser characteristic preservation.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The contact layer acts as an intermediary between the active layer and external environment, using its dual-region structure to mediate vacancy diffusion. The first region promotes vacancy generation and diffusion toward the window portion, while the second region restricts vacancy diffusion to non-window areas, thereby controlling the spatial distribution of disordering in the active layer.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively restricts laser light absorption in the window portion and minimizes deterioration of laser characteristics, preventing COD while maintaining low disordering in non-window portions.

Implementation Method 1

The active layer includes a window portion that is disordered via diffusion of vacancies

Methodology Applied

Scientific EffectDiffusion: Diffusion

Implementation Method 2

through an annealing process, generating vacancies with a density according to a density of the corresponding dielectric film

Methodology Applied

Scientific EffectAnnealing: Annealing

Data Source

PatentUS9627849B2Semiconductor light device and manufacturing method for the same

Publication Date: 2017.04.18 FURUKAWA ELECTRIC CO LTD

AI summary

Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.