Semiconductor Light Emitter with Constriction and Lighting Holes
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Solution Overview
Problem
Current light emitting semiconductor elements face challenges in achieving high light emitting efficiency while maintaining low manufacturing costs.
Innovation Solution
A semiconductor element design featuring a layered structure with a constriction hole and a lighting hole, where the constriction hole has a larger area than the lighting hole, and a mirror with a high reflection ratio for wavelengths between 200 nm to 350 nm is used to enhance light emission efficiency, along with a method for epitaxial growth and electrode positioning to optimize current flow and light reflection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a current blocking layer is partially inserted into semiconductor layers to form a buried current blocking layer, then current confinement is improved, but manufacturing complexity increases
Solution Approach 1:
The current blocking layer is divided into two distinct functional components: a buried current blocking layer partially inserted into the semiconductor layers for current confinement, and a planar current blocking layer formed on the surface for current spreading. This segmentation allows each layer to perform its specific function optimally while simplifying the overall manufacturing process compared to a single complex buried structure.
Solution Approach 2:
A current spreading layer is introduced as an intermediary component between the buried current blocking layer and the top electrode. This intermediary layer facilitates current distribution across the LED surface, improving current confinement effectiveness while maintaining manufacturing simplicity through a straightforward layering approach.
2Reliability
If the constriction hole area is made larger, then current spreading is improved, but light extraction efficiency decreases
Solution Approach 1:
The LED structure employs different hole areas at different locations: a larger constriction hole area in the current blocking layer for effective current spreading, and a smaller lighting hole area in the top electrode for optimized light extraction. This local quality variation allows simultaneous achievement of good current spreading and high light extraction efficiency by matching each hole size to its specific functional requirement.
Solution Approach 2:
The patent resolves the area conflict by introducing a vertical dimension with multiple hole structures at different depths and locations. The constriction hole extends through the current blocking layer while the lighting hole is formed in the top electrode, creating a multi-dimensional hole structure that satisfies both current spreading and light extraction requirements independently.
3Productivity
If a mirror with high reflection ratio is added to receive and reflect light, then light emitting efficiency is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The bottom electrode is designed to serve dual functions: as an electrical contact for current injection and as a reflective mirror for light extraction. By incorporating high reflection ratio materials into the bottom electrode structure, the patent eliminates the need for a separate mirror component, thereby improving light emitting efficiency while avoiding additional device complexity and manufacturing steps.
Solution Approach 2:
The reflective mirror function is merged with the bottom electrode structure. The bottom electrode is constructed with materials having high reflection ratios for the LED's emission wavelength, combining the electrical function and optical reflection function into a single integrated component, thus simplifying the overall device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves improved light emitting efficiency and reduced forward current voltage, balancing light emitting power and cost-effectiveness by optimizing the ratio of constriction hole to lighting hole diameters and utilizing materials with high reflection ratios.
Implementation Method 1
A mirror is positioned such that it receives light emitted from the light emitting layer that passes through the layered body of the first conductivity type. The mirror is constructed and arranged to have a high reflection ratio for light having peak wavelengths between 200 nm to 350 nm.
Implementation Method 2
A method for producing a semiconductor element according to a preferred embodiment of the present invention includes epitaxially growing a layered structure. The layered structure includes a constriction layer, a layered body of a second conductivity type, a light emitting layer, and a layered body of a first conductivity type.
Data Source
AI summary
A semiconductor element is disclosed having a layered body of a first conductivity type, a light emitting layer, a layered body of a second conductivity type, a constriction layer having a constriction hole, and a first electrode having a lighting hole, a second electrode positioned such that charge traveling between the first and second electrodes passes through the light emitting layer. The constriction hole area is larger than the lighting hole area, and the lighting hole and the constriction hole expose a part of the layered body of the second conductivity type. A mirror is positioned such that the mirror receives light emitted from the light emitting layer that passes through the layered body of the first conductivity type, and the mirror is constructed to have a high reflection ratio for light having peak wavelengths between 200 nm to 350 nm.