Semiconductor Light Emitting Device Aperture Current Constriction
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Solution Overview
Problem
Current current constricted type semiconductor light emitting devices face challenges in precisely controlling impurity diffusion regions, leading to difficulties in miniaturization and efficient light extraction due to wasted light from regions other than the aperture.
Innovation Solution
A semiconductor light emitting device structure comprising a substrate, first and second cladding layers, contact layers, an optically transmissive electrode layer, and a surface electrode layer with an aperture, where the optically transmissive electrode layer has a conductivity type opposite to the contact layers, allowing for precise current constriction and improved light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If impurities are doped in the semiconductor layer to constrict electric current, then light extracting efficiency is improved, but manufacturing precision deteriorates due to difficulty in precisely controlling the diffusion region
Solution Approach 1:
An n-type contact layer is introduced as an intermediary between the p-type second cladding layer and the electrode. This contact layer serves as a mediator that precisely controls current flow through its specific conductivity properties, eliminating the need for imprecise impurity diffusion while maintaining effective light extraction through the aperture.
Solution Approach 2:
The invention changes the conductivity type parameter of the contact layer (n-type) to be opposite to that of the cladding layer (p-type). This parameter change creates a precise current constriction mechanism at the contact layer without relying on difficult-to-control impurity diffusion regions, thereby improving both manufacturing precision and light extracting efficiency.
2Manufacturing precision
If a margin is increased to absorb diffusion errors, then manufacturing precision is maintained, but device size increases preventing miniaturization
Solution Approach 1:
The n-type contact layer acts as an intermediary that inherently defines the current path with high precision. This eliminates the need for additional margin dimensions to absorb diffusion errors, enabling miniaturization of the element while maintaining accurate current confinement to the aperture region.
3Ease of operation
If electric current flows in regions other than the aperture, then ease of operation is improved, but light extracting efficiency deteriorates due to light shielding by the electrode
Solution Approach 1:
The contact layer is designed with localized n-type conductivity properties that create a concentrated current flow path directly beneath the aperture. This local quality change ensures current flows precisely where needed for light extraction while the electrode continues to shield other regions, resolving the contradiction between current flow stability and light extraction efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves high luminance by efficiently extracting light through the aperture, reducing electric current diffusion and enhancing light output power while allowing for miniaturization of the element.
Implementation Method 1
an optically transmissive electrode layer disposed on the contact layer
Implementation Method 2
an emitting layer disposed on the first cladding layer
Data Source
AI summary
The semiconductor light emitting device includes: a substrate; a first cladding layer disposed on the substrate; an emitting layer disposed on the first cladding layer; a second cladding layer disposed on the emitting layer; a contact layer disposed at a predetermined region on the second cladding layer; an optically transmissive electrode layer disposed on the contact layer; a surface electrode layer disposed on the optically transmissive electrode layer; and an aperture formed by opening a region corresponding to the predetermined region of the surface electrode layer. There is provided a semiconductor light emitting device of which the light extracting efficiency can be improved to achieve high luminance.