Semiconductor Light-Emitting Structure Current Distribution
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Solution Overview
Problem
The existing semiconductor light-emitting structures face issues with non-uniform current distribution, leading to reduced light-emitting efficiency and heat dissipation difficulties due to the concentration of current between electrodes, which can result in damage and decreased light extraction rates.
Innovation Solution
A semiconductor light-emitting structure is designed with a first electrical transmission layer connected to conductors that serves as an extension, using transparent or semi-transparent materials to disperse current while minimizing light obstruction, thereby improving current distribution and light uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the distribution area of the two electrodes is increased to lighten the excessively concentrated current distribution problem, then the current distribution uniformity is improved, but the electrodes would block too much light, which leads to largely reducing the light extraction rate
Solution Approach 1:
The patent introduces a transparent conductive oxide layer (indium tin oxide, ITO) as an intermediary between the metal electrode and the light-emitting layer. This intermediate layer allows light to pass through while maintaining electrical conductivity, thus resolving the contradiction between needing large electrode area for uniform current distribution and minimizing light blocking. The transparent conductive oxide layer acts as a mediator that enables both functions simultaneously.
Solution Approach 2:
The patent changes the optical parameter (transparency) of the electrode structure by using transparent conductive oxide materials instead of traditional opaque metals. This parameter change allows the electrode to maintain its electrical function while becoming transparent to light, thus improving light extraction rate while maintaining uniform current distribution across the light-emitting layer.
2Illumination intensity
If the two electrodes are made of non-transparent metal and their distribution area is kept small, then the light extraction rate is maintained, but the current flowing from the p-type semiconductor layer to the n-type semiconductor layer would be excessively concentrated in a small area between the two electrodes
Solution Approach 1:
The patent segments the electrode structure into multiple layers: a transparent conductive oxide layer and a metal reflective layer. This segmentation allows the top transparent layer to allow light passage while the bottom metal layer provides electrical conductivity and reflects light. The segmented structure resolves the contradiction by assigning different functions to different layers.
Solution Approach 2:
The patent uses composite electrode structure combining transparent conductive oxide (such as ITO) with metal reflective layer. This composite material approach allows the electrode to simultaneously achieve transparency for light extraction and conductivity for uniform current distribution, resolving the contradiction between light extraction rate and current distribution uniformity.
3Illumination intensity
If the distribution area of the two electrodes is small, then the light extraction rate is not decreased, but the current flowing from the p-type semiconductor layer to the n-type semiconductor layer would be excessively concentrated, leading to heat-dissipation difficulty and easier damage of the LED
Solution Approach 1:
The transparent conductive oxide layer serves as an intermediary that enables the electrode to have both transparency for light extraction and sufficient surface area for heat dissipation. The intermediate layer allows the electrode structure to expand in area without compromising light extraction, thus improving heat dissipation capability while maintaining light extraction rate.
Solution Approach 2:
The composite electrode structure with transparent conductive oxide and metal layer allows for increased electrode area that does not compromise light extraction. The transparent conductive oxide layer enables the electrode to cover larger area for heat dissipation while remaining transparent to light, thus resolving the contradiction between light extraction rate and heat dissipation capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively enhances light-emitting efficiency and uniformity, reduces the risk of damage, and improves heat dissipation, resulting in a longer lifespan for the semiconductor light-emitting structure.
Implementation Method 1
The first electrical transmission layer is disposed on the first doped type semiconductor layer... The resistance of the second interface is less than the resistance of the first interface
Implementation Method 2
using transparent or semi-transparent materials to disperse current while minimizing light obstruction
Implementation Method 3
improves heat dissipation, resulting in a longer lifespan for the semiconductor light-emitting structure
Data Source
AI summary
A semiconductor light-emitting structure is provided, which includes a first doped type semiconductor layer, a light-emitting layer, a second doped type semiconductor layer, a first electrical transmission layer and at least one first conductor. The light-emitting layer is disposed on the first doped type semiconductor layer and the second doped type semiconductor layer is disposed on the light-emitting layer. The first electrical transmission layer is disposed on the first doped type semiconductor layer, in which a first interface is formed between the first electrical transmission layer and the first doped type semiconductor layer. The first conductor is disposed on the first doped type semiconductor layer. The first electrical transmission layer connects the first conductor. A second interface is formed between each of the first conductor and the first doped type semiconductor layer, and the resistance of the second interface is less than the resistance of the first interface.