Semiconductor Light-Emitting Device Current Path Redirection
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Solution Overview
Problem
Conventional semiconductor light-emitting devices suffer from reduced light-emitting efficiency due to a significant amount of emitted light being shielded and absorbed by non-transparent electrodes, as the electric current passes through the shortest route intersecting the p-n junction.
Innovation Solution
A semiconductor light-emitting device is designed with a light-emitting epitaxial structure, a light reflective layer, and a resistivity-enhancing structure to redirect and disperse the electric current, reducing light absorption by electrodes, comprising a first electrode structure connected to the epitaxial structure's surface, a light reflective layer adjacent to the opposite surface, and a resistivity-enhancing structure positioned to alter the current path, along with a buffer layer and protection structures to enhance light reflection and emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If electric current passes through the shortest route from electrode to electrode, then electrical conduction is efficient, but light emitted from the p-n junction is shielded and absorbed by the electrodes
Solution Approach 1:
The device segments the current path into multiple routes by introducing a resistivity-enhancing structure that blocks the direct shortest path. This forces the current to flow through extended paths that avoid the light-emitting region, reducing light absorption by electrodes while maintaining efficient electrical conduction through alternative routes
Solution Approach 2:
The resistivity-enhancing structure acts as an intermediary element between the electrodes and the light-emitting p-n junction. It modifies the current distribution by blocking direct current flow through the light-emitting region, thereby protecting the emitted light from being absorbed by the electrodes while still allowing current to reach the active region through other paths
2Illumination intensity
If electrodes are made non-transparent for electrical conduction, then electrical connection is reliable, but emitted light is significantly reduced
Solution Approach 1:
The device applies local quality by creating spatially varying electrical properties through the resistivity-enhancing structure. Different regions of the semiconductor layer have different resistivity characteristics, with the resistivity-enhancing structure having high resistivity to block current in specific areas, while other regions maintain low resistivity for efficient current flow, thereby allowing electrodes to remain non-transparent while reducing their light-absorbing impact on specific emission zones
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly enhances light-emitting efficiency by redirecting and dispersing the electric current, minimizing light absorption by electrodes and maximizing light emission, thereby improving the overall performance of semiconductor light-emitting devices.
Implementation Method 1
a light reflective layer is then formed over the second surface
Implementation Method 2
a resistivity-enhancing structure is formed over the light reflective layer... corresponding to a position of a first electrode structure
Implementation Method 3
charge-carriers—electrons and electron holes—combination occurs within the p-n junction, whereby the electrical energy is converted into light and emitted
Data Source
AI summary
A semiconductor light-emitting device comprises a light-emitting epitaxial structure, a first electrode structure, a light reflective layer and an resistivity-enhancing structure. The light-emitting epitaxial structure has a first surface and a second surface opposite to the first surface. The first electrode structure is electrically connected to the first surface. The light reflective layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed adjacent to the light reflective layer and away from the second surface corresponding to a position of the first electrode structure.