Semiconductor Light Emitting Device Carrier Blocking Layer
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Solution Overview
Problem
Existing semiconductor light emitting devices face inefficiencies in light emission due to carrier concentration on local areas of the active layer, leading to potential degradation and reduced reliability.
Innovation Solution
Incorporation of a carrier blocking layer within the first conductive semiconductor layer to diffuse carriers injected from the electrode, ensuring even distribution across the active layer, thereby enhancing light emitting efficiency and device reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If carriers are injected into the active layer through an upper electrode in a vertical type semiconductor light emitting device, then light emission is achieved, but carriers concentrate on local areas of the active layer causing degradation and reduced reliability
Solution Approach 1:
A carrier blocking layer is introduced as an intermediary component between the first conductive semiconductor layer and the active layer. This layer selectively blocks carriers (holes) from directly reaching the active layer, forcing them to diffuse laterally through the first conductive semiconductor layer before entering the active layer. This mediation prevents carrier concentration in local areas and improves both reliability and light emitting efficiency
2Productivity
If carriers are allowed to flow freely into the active layer, then light emitting process is maintained, but carrier concentration on specific areas reduces light emitting efficiency
Solution Approach 1:
The carrier blocking layer serves as a mediator that controls carrier flow into the active layer. By positioning this layer with specific material composition and thickness, carriers are forced to diffuse laterally through the first conductive semiconductor layer, achieving uniform carrier distribution across the active layer area, which directly improves light emitting efficiency
3Reliability
If a carrier blocking layer is added to diffuse carriers, then light emitting efficiency is improved, but device structure becomes more complex
Solution Approach 1:
The carrier blocking layer is implemented with local quality by positioning it specifically at the interface between the first conductive semiconductor layer and the active layer, rather than throughout the entire device structure. This localized approach achieves carrier diffusion control without unnecessarily complicating the overall device architecture
Solution Approach 2:
The carrier blocking layer is formed using composite material composition, typically combining group III elements (Ga, In, Al) with nitrogen in specific ratios to create materials with appropriate bandgap and carrier blocking properties. This allows effective carrier control while maintaining compatibility with the surrounding semiconductor layers
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The carrier blocking layer effectively diffuses carriers horizontally, improving light emitting efficiency and ensuring the reliability of semiconductor light emitting devices by preventing carrier concentration on specific areas of the active layer.
Implementation Method 1
The embodiment diffuses carriers injected into an upper electrode of a vertical type semiconductor light emitting device
Data Source
AI summary
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer including a first carrier blocking layer of semiconductor material; an active layer below the first conductive semiconductor layer; and a second conductive semiconductor layer below the active layer.