Semiconductor Light Emitting Device Column Wiring
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Solution Overview
Problem
Conventional AC-driven semiconductor light emitting devices have a limited light emitting area due to the structure, where only the p-type region generates light, and increasing the p-type region's size to enhance the light emitting area results in an overall device size increase.
Innovation Solution
The semiconductor light emitting device is designed with transistors arranged in columns, where each transistor has conductivity type regions on both sides with an active layer, and wires connect these regions between adjacent transistors, effectively enlarging the light emitting area without increasing the device size by optimizing the arrangement of transistors and wires.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the width of the p-type region is increased to enlarge the light emitting area, then the light emitting area is improved, but the size of the semiconductor light emitting device increases
Solution Approach 1:
The patent merges multiple light emitting regions by connecting p-type regions from adjacent transistors through wire bonds, creating an integrated light emitting structure that increases the effective light emitting area without proportionally increasing the device footprint. The wire bonds electrically connect and optically integrate the light output from multiple transistor regions.
Solution Approach 2:
The patent transitions from a planar arrangement where light emitting area is constrained by the substrate surface to a three-dimensional structure using vertical wire bonds that extend above the substrate. This allows light emitting regions to be stacked and connected in the vertical dimension, effectively increasing the light emitting area without expanding the device's horizontal footprint.
2Area of moving object
If transistors are arranged in multiple columns with wires connecting conductivity type regions, then the light emitting area is enlarged, but the device structure becomes more complex
Solution Approach 1:
The wire bonds serve multiple functions: they provide electrical connection between conductivity type regions of adjacent transistors, they act as structural support for the multi-column arrangement, and they facilitate heat dissipation from the light emitting regions. This multi-functionality reduces the need for additional specialized components, thereby managing structural complexity.
Solution Approach 2:
The patent segments the light emitting device into multiple independent transistor columns, each with its own light emitting regions. This segmentation allows for modular design where each column can be optimized independently, and the overall light emitting area is increased by combining multiple segmented regions rather than creating one large complex structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enlarges the light emitting regions without increasing the overall device size, improving the light emitting area efficiency compared to traditional LED-based structures.
Implementation Method 1
When the alternating voltages are applied to the wire bonding regions 98 and 100, a potential difference takes place between the p-type region 94 and the n-type region 95 of each LED 92, and each LED 92 emits light.
Data Source
AI summary
A plurality of transistors are formed on a substrate in a plurality of columns. Each transistor has a first conductivity type region and second conductivity type regions provided on both sides thereof in a column direction, and has an active layer on the side of each second conductivity type region closer to the substrate. Between two columns adjacent to each other, the second conductivity type region on a first side in the column direction of each transistor arranged on a first column, the second conductivity type region on a second side in the column direction of the transistor adjacent to this transistor on the first side in the column direction and the first conductivity type region of each transistor arranged on a second column are electrically connected by a first wire. Between these two columns, the second conductivity type region on the first side in the column direction of each transistor arranged on the second column, the second conductivity type region on the second side in the column direction of the transistor adjacent to this transistor on the first side in the column direction and the first conductivity type region of each transistor arranged on the first column are electrically connected by a second wire.