Semiconductor Light Emitting Device Current Diffusion Layer
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Solution Overview
Problem
Semiconductor light emitting devices face issues with current concentration leading to heat and non-uniform light emission, which affects their reliability and operating voltage.
Innovation Solution
A semiconductor light emitting device design featuring a current diffusion layer with strategically placed openings and electrodes that spread current laterally, reducing concentration and enhancing light uniformity, and a manufacturing process that includes forming reflective layers and electrodes to minimize heat and improve luminance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If current is applied to the semiconductor light emitting device, then light emission occurs through electron-hole recombination, but current concentration occurs leading to heat generation and non-uniform light emission
Solution Approach 1:
The patent applies local quality by creating a current diffusion layer with spatially varying properties. The layer has different doping concentrations and thicknesses at different locations, with higher doping concentration and thickness at edges compared to the center. This local variation in material properties redirects current flow from concentrated edge paths to a more distributed pattern across the active region, reducing current crowding and associated heat generation while improving light emission uniformity.
2Illumination intensity
If current diffusion layer is added to spread current, then light uniformity improves, but device structure becomes more complex
Solution Approach 1:
The patent merges the current diffusion function with the existing semiconductor layer structure. The current diffusion layer is integrated as part of the semiconductor device architecture, combining current spreading functionality with the active region structure. This integration approach achieves current uniformization while minimizing additional structural complexity by utilizing the semiconductor layers themselves rather than adding separate external components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution increases light uniformity, reduces heat due to current crowding, and lowers operating voltage, thereby enhancing the reliability and efficiency of the semiconductor light emitting device.
Implementation Method 1
A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer
Implementation Method 2
Semiconductor light emitting devices provide light of various colors through electron-hole recombination occurring at p-n junctions between p-type and n-type semiconductor layers when current is applied thereto
Data Source
AI summary
A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.