Semiconductor Light Emitting Device with Dispersion Bragg Reflectors
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Solution Overview
Problem
Semiconductor light emitting devices face challenges in achieving improved light extraction efficiency, color purity, and color coordinate uniformity, which are essential for high-resolution displays and efficient light emission.
Innovation Solution
The semiconductor light emitting device incorporates a layered structure with dispersion Bragg reflector (DBR) layers and semiconductor stacks, where each light emitting portion has a specific DBR layer configuration to optimize reflectivity and light extraction, allowing for improved light emission and color uniformity across different wavelengths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional LED structures are used, then device simplicity is maintained, but light extraction efficiency is insufficient
Solution Approach 1:
The patent employs composite material structures including dispersion Bragg reflector (DBR) layers combined with semiconductor stacks, and multiple bonding layers with different optical properties. These composite structures enhance light extraction efficiency by manipulating optical paths and reducing total internal reflection, while maintaining manufacturability through established semiconductor fabrication processes.
Solution Approach 2:
The patent introduces vertical layering with multiple DBR layers and bonding layers stacked above and below the semiconductor stack. This dimensional approach creates multiple interfaces for light extraction and reflection, improving overall light extraction efficiency without complicating the horizontal device layout or manufacturing process.
2Device complexity
If single wavelength LED is used, then device complexity is reduced, but color purity and color coordinate uniformity deteriorate
Solution Approach 1:
The patent segments the light emitting device into multiple independent light emitting portions, each with its own semiconductor stack and DBR layer configuration. This segmentation allows each portion to be optimized for specific wavelength ranges while maintaining overall device simplicity and enabling precise control over color purity and coordinate uniformity through individual layer design.
Solution Approach 2:
Different DBR layers are designed with specific reflectivity characteristics tailored to their position and function within the device. The lower DBR layers have different optical properties compared to upper DBR layers, allowing local optimization of light extraction and color characteristics for each region of the device.
3Manufacturing precision
If high resolution display is achieved through pixel reduction, then manufacturing precision is improved, but light extraction efficiency and color uniformity worsen
Solution Approach 1:
The patent addresses the light extraction challenge in high-resolution displays by introducing vertical DBR layer structures that provide additional light extraction pathways in the vertical dimension. This compensates for the reduced lateral space available in miniaturized high-resolution pixels, maintaining light extraction efficiency without compromising pixel definition precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light extraction efficiency and color purity, enabling the production of high-resolution displays with improved color uniformity and efficient light emission.
Implementation Method 1
a first lower dispersion Bragg reflector (DBR) layer disposed below the first semiconductor stack and a first upper dispersion Bragg reflector (DBR) layer disposed above the first semiconductor stack
Implementation Method 2
a first semiconductor stack disposed on the first lower dispersion Bragg reflector (DBR) layer and configured to emit first light having a first wavelength
Data Source
AI summary
A semiconductor light emitting device includes a first light emitting portion including a first semiconductor stack, as well as a first lower dispersion Bragg reflector (DBR) layer and a first upper dispersion Bragg reflector (DBR) layer, disposed above and below the first semiconductor stack, a second light emitting portion including a second semiconductor stack, as well as a second lower dispersion Bragg reflector (DBR) layer and a second upper dispersion Bragg reflector (DBR) layer, disposed above and below the second semiconductor stack, a third light emitting portion including a third semiconductor stack, as well as a third lower dispersion Bragg reflector (DBR) layer and a third upper dispersion Bragg reflector (DBR) layer, disposed above and below the third semiconductor stack, a first bonding layer disposed between the first light emitting portion and the second light emitting portion, and a second bonding layer disposed between the second light emitting portion and the third light emitting portion.