Semiconductor Light Emitting Device Embedded Electrode
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Solution Overview
Problem
Current semiconductor light emitting devices face inefficiencies in light extraction, leading to reduced light output and reliability, particularly in high current/high output applications.
Innovation Solution
The semiconductor light emitting device incorporates a unique electrode structure with a second electrode embedded within the second conductivity type semiconductor layer, an insulating part separating the electrodes, and pad electrodes disposed in opposite directions, which reduces light absorption and enhances light extraction efficiency by optimizing the light emitting surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a traditional vertical-type electrode structure is used, then the device structure is simple, but the light extraction efficiency is reduced due to light absorption by electrodes
Solution Approach 1:
The patent transitions from a traditional vertical electrode arrangement to a lateral electrode configuration where the second electrode is embedded within the light emitting structure at a different spatial dimension. This dimensional repositioning allows the electrode to be placed in a location that does not interfere with the vertical light extraction path, thereby maintaining structural simplicity while significantly improving light extraction efficiency by reducing light absorption.
Solution Approach 2:
The patent introduces an insulating part as an intermediary element that electrically isolates the second electrode from the first conductivity type semiconductor layer while allowing optical transparency. This intermediary structure enables the electrode to be embedded within the light emitting structure without blocking light extraction, effectively mediating between the electrical connection requirement and the light extraction efficiency requirement.
2Loss of energy
If the second electrode is embedded within the light emitting structure, then light loss is minimized, but the device complexity increases
Solution Approach 1:
The patent segments the electrode structure into multiple functional components: a first electrode for electrical connection, a second electrode embedded within the light emitting structure for current injection, and an insulating part for electrical isolation. This segmentation allows each component to perform its specific function optimally, minimizing light loss while managing complexity through functional decomposition rather than monolithic design.
Solution Approach 2:
The embedded second electrode serves multiple functions simultaneously: it provides electrical connection to the second conductivity type semiconductor layer, enables lateral current injection to improve carrier distribution, and is positioned to minimize interference with vertical light extraction. The insulating part also serves dual purposes of electrical isolation and structural support. This multi-functionality reduces overall device complexity by combining multiple roles into single components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light extraction efficiency by 3.5% compared to traditional vertical-type devices, achieving a higher light output and reliability, with the second electrode being embedded within the light emitting structure to minimize light loss and enhance the light emitting surface's efficiency.
Implementation Method 1
an active layer emitting light of various colors including blue light and green light through recombination of electrons and holes
Data Source
AI summary
A semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode disposed below the light emitting structure, the first electrode being electrically connected to the first conductivity type semiconductor layer, a second electrode within the light emitting structure, the second electrode being electrically connected to the second conductivity type semiconductor layer, an insulating part electrically separating the second electrode from the first conductivity type semiconductor layer, the active layer, and the first electrode, a first pad electrode electrically connected to the first electrode, and a second pad electrode electrically connected to the second electrode, the second pad electrode being exposed to a top surface of the light emitting structure.