Semiconductor Light-Emitting Device Non-Conductive Reflective Film
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Solution Overview
Problem
Current semiconductor light-emitting devices face challenges in efficiently reflecting light due to the design of their reflective structures, which affects light extraction efficiency and manufacturing costs.
Innovation Solution
The semiconductor light-emitting device incorporates a non-conductive reflective film with a DBR and dielectric layers, along with inclined faces and finger electrodes, to enhance light reflection and extraction, while minimizing material usage and manufacturing complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a metallic reflective film is used to reflect light towards the substrate, then light extraction efficiency is improved, but material costs and device complexity increase
Solution Approach 1:
The patent replaces expensive metallic reflective films with a non-conductive dielectric reflective film having a refractive index lower than the semiconductor layer. This dielectric film is cheaper and simpler to manufacture while achieving the same light reflection function, directly resolving the contradiction between light extraction efficiency and device complexity/cost
Solution Approach 2:
The patent changes the key parameter of the reflective film from metallic (conductive) to dielectric (non-conductive with specific refractive index). This parameter change enables the film to reflect light effectively while being cheaper and simpler, resolving the technical contradiction
2Device complexity
If a non-conductive reflective film with lower refractive index is used, then material costs are reduced, but light reflection effectiveness may deteriorate
Solution Approach 1:
The patent precisely controls the refractive index parameter of the dielectric film to be lower than the semiconductor layer (e.g., dielectric film refractive index 1.4-2.5, semiconductor layer 2.5-4.0). This specific parameter range ensures effective light reflection while maintaining the advantages of non-conductive materials
Solution Approach 2:
The patent creates a composite structure where the dielectric reflective film is combined with the semiconductor layers and encapsulant. The refractive index difference between these materials creates the reflection effect, achieving effective light extraction without metals
3Loss of energy
If the refractive index of the encapsulant is higher than the semiconductor layer, then light extraction is improved, but internal reflection increases
Solution Approach 1:
The patent applies different refractive index requirements to different parts of the device: the encapsulant has higher refractive index than the semiconductor layer for overall light extraction, while the dielectric reflective film has lower refractive index than the semiconductor layer for specific reflection control. This local differentiation resolves the contradiction between light extraction and internal reflection
Solution Approach 2:
The patent uses a composite material system where the dielectric reflective film with specific refractive index is positioned between the semiconductor layer and encapsulant. This composite structure manages light paths to achieve extraction while controlling harmful internal reflection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light extraction efficiency and reduces material costs by effectively reflecting light from the active layer towards the substrate, enhancing the overall performance of the semiconductor light-emitting device.
Implementation Method 1
a non-conductive reflective film with a DBR and dielectric layers
Implementation Method 2
a non-conductive reflective film with a DBR and dielectric layers
Implementation Method 3
a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer
Data Source
AI summary
A semiconductor light-emitting device of the present disclosure includes a plurality of semiconductor layers; a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer; a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer; a non-conductive reflective film formed on the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer.