Semiconductor Light Emitting Device With Dividing Grooves
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Solution Overview
Problem
Current semiconductor light emitting devices face challenges in improving external quantum efficiency and electrical reliability, particularly due to issues with light scattering and electrical shorts within the device structure.
Innovation Solution
The semiconductor light emitting device is designed with a structure that divides the light emitting area into multiple sections using grooves, and includes an ohmic contact layer between the light emitting structure and the second electrode layer, as well as a protective layer to prevent electrical shorts and enhance reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the light emitting area is increased to improve light output, then the external quantum efficiency deteriorates due to increased light scattering
Solution Approach 1:
The light emitting structure is divided into multiple light emitting areas by forming dividing grooves that extend from the first conductive type semiconductor layer to the second conductive type semiconductor layer. This segmentation reduces light scattering within each individual emitting area while maintaining overall light output from multiple separated regions.
2Device complexity
If the device structure is simplified to reduce manufacturing complexity, then the electrical reliability deteriorates due to increased risk of electrical shorts
Solution Approach 1:
An ohmic contact layer is introduced as an intermediary between the second electrode layer and the second conductive type semiconductor layer. This additional layer prevents electrical shorts while maintaining electrical contact functionality, thereby improving reliability without significantly increasing manufacturing complexity.
3Loss of energy
If dividing grooves are formed to reduce light scattering, then the manufacturing precision requirements increase
Solution Approach 1:
The dividing grooves extend partially through the light emitting structure, from the first conductive type semiconductor layer to the second conductive type semiconductor layer, but not completely through all layers. This partial penetration achieves the light scattering reduction effect while avoiding the need for extremely precise complete penetration, thereby reducing manufacturing precision requirements.
4Reliability
If the ohmic contact layer is added to prevent electrical shorts, then the device complexity increases
Solution Approach 1:
The ohmic contact layer serves multiple functions: it provides electrical contact between the second electrode layer and the second conductive type semiconductor layer, prevents electrical shorts, and maintains structural integrity. This multi-functionality justifies the additional layer by delivering multiple benefits rather than simply increasing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves external quantum efficiency by minimizing light scattering and enhances electrical reliability by preventing shorts, leading to more effective light emission and device performance.
Implementation Method 1
a second electrode layer comprising a reflective electrode
Data Source
AI summary
Provided is a semiconductor light emitting device.The semiconductor light emitting device comprises a second electrode layer; a light emitting structure comprising a plurality of compound semiconductor layers under the second electrode layer; at least one dividing groove that divides inner areas of the lower layers of the light emitting structure into a plurality of areas; and a first electrode under the light emitting structure.