Semiconductor Light Emitting Device Thin Insulating Layer Hole Diffusion
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Solution Overview
Problem
Semiconductor light emitting devices face challenges with high leakage current and inefficient light emission due to the lack of effective diffusion of holes between the active layer and the conductive type semiconductor layers.
Innovation Solution
Incorporating a thin insulating layer with a P-type dopant concentration of about 5×10^18/cm^3 or less between the active layer and the second conductive type semiconductor layer to diffuse holes and reduce leakage current, thereby improving optical characteristics such as internal quantum efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor layer structure is used without a thin insulating layer, then the device structure is simpler, but high leakage current occurs due to inefficient hole diffusion between the active layer and conductive type semiconductor layers
Solution Approach 1:
A thin insulating layer with P-type dopant concentration of about 5×10^18/cm³ or less is introduced between the active layer and the second conductive type semiconductor layer. This intermediary layer facilitates efficient hole diffusion while maintaining electrical insulation properties, thereby reducing leakage current without significantly complicating the overall device structure.
Solution Approach 2:
The thin insulating layer is positioned specifically at the interface between the active layer and the second conductive type semiconductor layer where hole diffusion is critical. By localizing the insulating layer with optimized P-type dopant concentration only where needed, the invention improves hole diffusion efficiency and reduces leakage current without requiring changes to the entire device structure.
2Reliability
If the P-type dopant concentration in the thin insulating layer is increased to improve hole diffusion, then hole diffusion efficiency improves, but the insulating property of the layer deteriorates leading to increased leakage current
Solution Approach 1:
The P-type dopant concentration in the thin insulating layer is precisely controlled at about 5×10^18/cm³ or less. This parameter optimization balances two competing requirements: maintaining sufficient insulating properties to prevent leakage current while enabling adequate hole diffusion efficiency. The specific dopant concentration range represents an optimized compromise between electrical insulation and charge carrier transport.
3Manufacturing precision
If no thin insulating layer is formed, then the manufacturing process is simpler, but light emission uniformity across the active layer is poor
Solution Approach 1:
The thin insulating layer serves as an intermediary structure that enhances light emission uniformity across the active layer by facilitating controlled hole diffusion. The layer's specific P-type dopant concentration enables uniform charge distribution, which directly improves the uniformity of light emission without requiring complex manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The thin insulating layer effectively diffuses holes, reducing leakage current and enhancing light emission uniformity across the active layer, resulting in improved operational efficiency and reliability of the semiconductor light emitting device.
Implementation Method 1
a thin insulating layer using a P-type dopant concentration of about 5×10^18/cm^3 or less between an active layer and a second conductive type semiconductor layer to diffuse holes
Data Source
AI summary
Provided are a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a third semiconductor layer disposed on the second semiconductor layer; and a fourth semiconductor layer disposed on the third semiconductor layer. The second semiconductor layer is formed of an InAlGaN semiconductor layer, the third semiconductor layer is formed of an AlGaN semiconductor layer, and the fourth semiconductor layer is formed of a GaN semiconductor layer.