Semiconductor Light Emitting Device Non-Conductive Reflective Film

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Solution Overview

Problem

Semiconductor light emitting devices face challenges in reducing electrical contact resistance and improving the reliability of electrical contacts, particularly due to light absorption by metal reflective films and inadequate current spreading in existing electrode structures.

Innovation Solution

A semiconductor light emitting device is designed with a non-conductive reflective film that reflects light back towards the substrate, featuring an opening for electrical connection through which the electrode is exposed, and an upper electrode is formed on this film to establish a stable electrical contact, reducing contact resistance and enhancing reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If a metal reflective film structure is used, then light reflectance is improved and current spreading is facilitated, but light absorption by the metal increases

Engineering Contradiction:
Improvelight reflectanceVSAvoidlight absorption
Core Design Contradiction:
Illumination intensityVSLoss of energy

Solution Approach 1:

The reflective film is segmented into a non-conductive reflective film with multiple openings, allowing different regions to serve different functions: light reflection and electrical contact

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the reflective film have different properties: non-conductive regions for light reflection and conductive electrode regions for electrical contact and current spreading

Inventive Principle:
Principle #3Local quality

Solution Approach 3:

The non-conductive reflective film acts as an intermediary between the metal electrode and the light path, reflecting light while allowing electrical contact through openings

Inventive Principle:
Principle #24Intermediary (Mediator)

2Loss of energy

If a non-metal reflective film is used, then light absorption is reduced, but current spreading capability deteriorates

Engineering Contradiction:
Improvelight absorptionVSAvoidcurrent spreading
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

The reflective structure is segmented into non-conductive reflective regions and separate conductive electrode regions, combining advantages of both material types

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The electrode structure serves multiple functions: electrical contact, current spreading, and working in conjunction with the non-conductive reflective film for light reflection

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Device complexity

If electrodes are formed on one side of the substrate, then device structure is simplified, but electrical contact resistance increases

Engineering Contradiction:
Improvedevice structureVSAvoidelectrical contact resistance
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The electrode structure extends in multiple dimensions with lower electrodes on the semiconductor layer and upper electrodes on the reflective film, creating a three-dimensional contact structure that reduces contact resistance

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively minimizes light absorption, improves current spreading, and enhances the bonding strength and production yield of semiconductor light emitting devices by providing a stable electrical connection and reducing operating voltage issues.

Implementation Method 1

a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate

Methodology Applied
Scientific EffectLight reflection: Reflection

Data Source

PatentUS9748446B2Semiconductor light emitting device
Publication Date: 2017.08.29 LUMENS CO LTD
  • US9748446B2 patent drawing
  • US9748446B2 patent drawing
  • US9748446B2 patent drawing

AI summary

Disclosed is a semiconductor light emitting device, including: a plurality of semiconductor layers grown sequentially on a growth substrate; a first electrode part, which is in electrical communication with the first semiconductor layer and supplies one of electrons or holes thereto; a second electrode part, which is in electrical communication with the second semiconductor layer and supplies the other one of electrons or holes thereto; and a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein, wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening; an upper electrode provided on the non-conductive reflective film; and an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrode.