Semiconductor Light-Emitting Device Planar Surface Laser Singulation
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Solution Overview
Problem
The manufacturing of semiconductor light-emitting devices with deep ultraviolet radiation capabilities faces challenges in forming rugged structures and singulating the devices due to laser beam scattering by the rugged structures, which hinders efficient light extraction and increases the risk of damage to the light-emitting structure.
Innovation Solution
A method involving the formation of a planar surface by removing the rugged structure in a partial region of the light-extracting surface, allowing for favorable laser irradiation and reduced thickness of the light-extracting layer, facilitating easier singulation and enhancing light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a rugged structure is formed in the light-extracting surface to improve light extraction efficiency, then light extraction efficiency is improved, but laser beam scattering occurs making singulation difficult
Solution Approach 1:
The light-extracting surface is segmented into two distinct regions: a first region with a rugged structure for high light extraction efficiency, and a second planar region for favorable laser beam irradiation during singulation. This spatial segmentation allows both the rugged structure's optical benefits and the planar surface's manufacturing advantages to coexist without interfering with each other.
Solution Approach 2:
Different regions of the light-extracting surface are assigned different surface qualities tailored to their specific functions. The first region has a rugged structure optimized for light extraction, while the second region has a planar surface optimized for laser processing. This local differentiation resolves the contradiction by providing each region with the quality it needs for its intended purpose.
2Ease of manufacture
If the light-extracting layer thickness is reduced to facilitate easier cutting, then singulation becomes easier, but light extraction efficiency may be compromised
Solution Approach 1:
The light-extracting layer is functionally segmented into regions with different thickness characteristics. The planar second region has reduced thickness to facilitate laser cutting and singulation, while the rugged first region maintains sufficient thickness to preserve light extraction efficiency. This segmentation allows the layer to simultaneously satisfy both manufacturing and optical performance requirements in different areas.
3Measurement precision
If laser beam is used for singulation, then precise cutting is achieved, but laser scattering by rugged structure prevents proper reformed portion formation
Solution Approach 1:
A planar surface is preliminarily formed in the second region before the laser singulation process. This preliminary planarization of the surface removes the rugged structure's light-scattering effect from the laser path, ensuring that the laser beam can properly form reformed portions and achieve precise cutting without being scattered by surface irregularities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of semiconductor light-emitting devices with improved light extraction efficiency and reduced damage to the light-emitting structure during the singulation process, by creating a planar surface for laser irradiation and reducing the thickness of the light-extracting layer.
Implementation Method 1
forming a reformed portion inside the light-extracting layer by irradiating the planar surface with a laser
Implementation Method 2
the laser beam is scattered by the rugged structure, making it difficult to form the reformed portions
Data Source
AI summary
A method of manufacturing a semiconductor light-emitting device includes: preparing a layer stack including a light-extracting layer and a light-emitting structure, the light-extracting layer having a first principal surface and a second principal surface opposite to the first principal surface, the light-emitting structure being provided on the first principal surface of the light-extracting layer; forming a pattern mask over a partial region of the second principal surface; dry-etching the second principal surface to form a rugged structure in a region where the pattern mask is formed and to form a recess portion having a planar surface in a region that is exposed without having the pattern mask formed thereover; and singulating the layer stack by irradiating the planar surface with a laser and cutting at least the light-extracting layer at a position of the planar surface.